Paper Abstract and Keywords |
Presentation |
2009-02-26 13:30
[Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) ED2008-224 SDM2008-216 Link to ES Tech. Rep. Archives: ED2008-224 SDM2008-216 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electron devices. Exfoliation from highly-oriented pyrolitic graphite and surface decomposition of epitaxial SiC are well-known as graphene formation technologies. However, when it is introduced to the post-CMOS VLSIs as the key material, introduction of Si substrate as the starting material as well as practically low-temperature, reproducible growth technology are mandatory. To cope with those issues we developed “graphene-on-silicon” material growth technology consisting of epitaxial growth of 3C-SiC onto Si substrate using organo-silan gas-source MBE and surface decomposition processes. By utilizing such a new GOS material to form the channel with graphene, we succeeded in the transistor operation. This is the first step ahead; we have recognized existing subjects for ultra-high performance, mass-productive device fabrication. The exceptional electronic properties of graphene can devise wide variety of new devices including plasmonic devices and terahertz lasers which will also be described. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
graphene / epitaxial growth / silicon / FET / CMOS / terahertz / laser / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 437, ED2008-224, pp. 1-6, Feb. 2009. |
Paper # |
ED2008-224 |
Date of Issue |
2009-02-19 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
ED2008-224 SDM2008-216 Link to ES Tech. Rep. Archives: ED2008-224 SDM2008-216 |
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