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| Presentation | 2009-04-24 17:05 Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance Shintaro Kanoh, Sho Nagata, Gou Nakagawa, Tanemasa Asano (Kyushu Univ.)  SDM2009-7 OME2009-7 Link to ES Tech. Rep. Archives: SDM2009-7 OME2009-7 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In the case of solid phase crystallization of amorphous Si (a-Si) deposited by plasma-enhanced chemical vapor deposition (PECVD), it is difficult to clearly observe the spontaneous nucleation and growth in contrast to the case of a-Si films deposited by evaporation in ultra-high vacuum. The polycrystalline films thus crystallized from PECVD deposited a-Si films show small carrier mobility when they are applied to TFTs. In this paper, metal induced lateral crystallization (MILC) has been applied to a-Si films prepared by PECVD. It has better carrier mobility and a similar growth characteristic to the film crystallized from a-Si deposited in ultra-high vacuum. Results of an attempt of grain filtering carried out by patterning a-Si films prior to MILC are also described. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | polycrystalline silicon / thin film transistor / plasma-enhanced chemical vapor deposition / metal induced lateral crystallization / MILC / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 19, SDM2009-7, pp. 29-34, April 2009. | |
| Paper # | SDM2009-7 | |
| Date of Issue | 2009-04-17 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-7 OME2009-7 Link to ES Tech. Rep. Archives: SDM2009-7 OME2009-7 |
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| Conference Information | |
| Committee | OME SDM |
| Conference Date | 2009-04-24 - 2009-04-24 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | AIST Kyushu-center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-04-OME-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Metal Induced Lateral Crystallization of PECVD a-Si and Its Impact on TFT Performance |
| Sub Title (in English) | |
| Keyword(1) | polycrystalline silicon |
| Keyword(2) | thin film transistor |
| Keyword(3) | plasma-enhanced chemical vapor deposition |
| Keyword(4) | metal induced lateral crystallization |
| Keyword(5) | MILC |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shintaro Kanoh |
| 1st Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 2nd Author's Name | Sho Nagata |
| 2nd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 3rd Author's Name | Gou Nakagawa |
| 3rd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 4th Author's Name | Tanemasa Asano |
| 4th Author's Affiliation | Kyushu University (Kyushu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-04-24 17:05:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2009-7, OME2009-7 |
| Volume (vol) | vol.109 |
| Number (no) | no.19(SDM), no.20(OME) |
| Page | pp.29-34 |
| #Pages | 6 |
| Date of Issue | 2009-04-17 (SDM, OME) |
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