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Paper Abstract and Keywords
Presentation 2009-04-24 16:15
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange
Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 Link to ES Tech. Rep. Archives: SDM2009-5 OME2009-5
Abstract (in Japanese) (See Japanese page) 
(in English) Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate has been investigated to achieve high-speed thin-film transistors and high-efficiency thin-film solar cells. Crystal growth morphology drastically changed with Ge fraction, and layer exchange occurred heterogeneously for high Ge fractions (>50$\%$). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, homogeneous layer exchange was achieved for samples with the whole Ge fractions ($x$=0-1) by controlling the air exposure time. These new findings will be a powerful tool to obtain high quality poly-SiGe films on glass substrates.
Keyword (in Japanese) (See Japanese page) 
(in English) Al-induced crystallization (AIC) / silicon germanium (SiGe) / thin-film transistor / thin-film solar cell / low-temperature crystallization / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 19, SDM2009-5, pp. 19-23, April 2009.
Paper # SDM2009-5 
Date of Issue 2009-04-17 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-5 OME2009-5 Link to ES Tech. Rep. Archives: SDM2009-5 OME2009-5

Conference Information
Committee OME SDM  
Conference Date 2009-04-24 - 2009-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) AIST Kyushu-center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2009-04-OME-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange 
Sub Title (in English)  
Keyword(1) Al-induced crystallization (AIC)  
Keyword(2) silicon germanium (SiGe)  
Keyword(3) thin-film transistor  
Keyword(4) thin-film solar cell  
Keyword(5) low-temperature crystallization  
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1st Author's Name Masashi Kurosawa  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Naoyuki Kawabata  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Taizoh Sadoh  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Masanobu Miyao  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2009-04-24 16:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2009-5, OME2009-5 
Volume (vol) vol.109 
Number (no) no.19(SDM), no.20(OME) 
Page pp.19-23 
#Pages
Date of Issue 2009-04-17 (SDM, OME) 


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