Paper Abstract and Keywords |
Presentation |
2009-04-24 16:15
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 Link to ES Tech. Rep. Archives: SDM2009-5 OME2009-5 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate has been investigated to achieve high-speed thin-film transistors and high-efficiency thin-film solar cells. Crystal growth morphology drastically changed with Ge fraction, and layer exchange occurred heterogeneously for high Ge fractions (>50$\%$). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, homogeneous layer exchange was achieved for samples with the whole Ge fractions ($x$=0-1) by controlling the air exposure time. These new findings will be a powerful tool to obtain high quality poly-SiGe films on glass substrates. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Al-induced crystallization (AIC) / silicon germanium (SiGe) / thin-film transistor / thin-film solar cell / low-temperature crystallization / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 19, SDM2009-5, pp. 19-23, April 2009. |
Paper # |
SDM2009-5 |
Date of Issue |
2009-04-17 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2009-5 OME2009-5 Link to ES Tech. Rep. Archives: SDM2009-5 OME2009-5 |
Conference Information |
Committee |
OME SDM |
Conference Date |
2009-04-24 - 2009-04-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
AIST Kyushu-center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-04-OME-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange |
Sub Title (in English) |
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Keyword(1) |
Al-induced crystallization (AIC) |
Keyword(2) |
silicon germanium (SiGe) |
Keyword(3) |
thin-film transistor |
Keyword(4) |
thin-film solar cell |
Keyword(5) |
low-temperature crystallization |
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1st Author's Name |
Masashi Kurosawa |
1st Author's Affiliation |
Kyushu University (Kyushu Univ.) |
2nd Author's Name |
Naoyuki Kawabata |
2nd Author's Affiliation |
Kyushu University (Kyushu Univ.) |
3rd Author's Name |
Taizoh Sadoh |
3rd Author's Affiliation |
Kyushu University (Kyushu Univ.) |
4th Author's Name |
Masanobu Miyao |
4th Author's Affiliation |
Kyushu University (Kyushu Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-04-24 16:15:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2009-5, OME2009-5 |
Volume (vol) |
vol.109 |
Number (no) |
no.19(SDM), no.20(OME) |
Page |
pp.19-23 |
#Pages |
5 |
Date of Issue |
2009-04-17 (SDM, OME) |
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