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| Presentation | 2009-05-14 16:40 Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)  ED2009-25 CPM2009-15 SDM2009-15 Link to ES Tech. Rep. Archives: ED2009-25 CPM2009-15 SDM2009-15 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Microcrystalline Si1-xGex (x~0.8) has been successfully deposited over SiO2 substrates by magnetron sputtering. Detailed investigation about the deposition condition revealed that crystalline phase begins to form at about 300°C, which roughly correspond to half the melting temperature of the material where surface migration of deposited atom starts to take place. Substrate bias effect was also investigated, which showed the degradation of crystallinity for the substrate temperature of 350°C while improvement of crystallinity was found for 300°C samples. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | magnetron sputter / microcrystalline SiGe / thin film transistor / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 25, SDM2009-15, pp. 37-42, May 2009. | |
| Paper # | SDM2009-15 | |
| Date of Issue | 2009-05-07 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-25 CPM2009-15 SDM2009-15 Link to ES Tech. Rep. Archives: ED2009-25 CPM2009-15 SDM2009-15 |
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| Conference Information | |
| Committee | ED CPM SDM |
| Conference Date | 2009-05-14 - 2009-05-15 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Satellite Office, Toyohashi Univ. of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-05-ED-CPM-SDM |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates |
| Sub Title (in English) | |
| Keyword(1) | magnetron sputter |
| Keyword(2) | microcrystalline SiGe |
| Keyword(3) | thin film transistor |
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| 1st Author's Name | Akihiko Hiroe |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Tetsuya Goto |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Akinobu Teramoto |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Tadahiro Ohmi |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-05-14 16:40:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | ED2009-25, CPM2009-15, SDM2009-15 |
| Volume (vol) | vol.109 |
| Number (no) | no.23(ED), no.24(CPM), no.25(SDM) |
| Page | pp.37-42 |
| #Pages | 6 |
| Date of Issue | 2009-05-07 (ED, CPM, SDM) |
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