Paper Abstract and Keywords |
Presentation |
2009-06-12 11:25
Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 Link to ES Tech. Rep. Archives: ED2009-48 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance between the low pinched-off-current and the good surface quality for millimeter-wave short gate-periphery devices. We investigated the effects of buffer structures on crystal quality, optical property and transport characteristics. We concluded that thickness control of AlGaN buffer with thin GaN channel is the key features for reducing deep level formation and improving surface morphology. This enables high mobility with good pinched-off characteristics in the GaN-HEMT. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN-HEMT / Amplifier / Millimeter-wave / Three-terminal breakdown voltage / Pinched-off current / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 81, ED2009-48, pp. 63-67, June 2009. |
Paper # |
ED2009-48 |
Date of Issue |
2009-06-04 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
ED2009-48 Link to ES Tech. Rep. Archives: ED2009-48 |