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Paper Abstract and Keywords
Presentation 2009-06-12 11:25
Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) ED2009-48 Link to ES Tech. Rep. Archives: ED2009-48
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, GaN channel and AlGaN buffer layer structure in the GaN-HEMT was optimized to achieve a good balance between the low pinched-off-current and the good surface quality for millimeter-wave short gate-periphery devices. We investigated the effects of buffer structures on crystal quality, optical property and transport characteristics. We concluded that thickness control of AlGaN buffer with thin GaN channel is the key features for reducing deep level formation and improving surface morphology. This enables high mobility with good pinched-off characteristics in the GaN-HEMT.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN-HEMT / Amplifier / Millimeter-wave / Three-terminal breakdown voltage / Pinched-off current / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 81, ED2009-48, pp. 63-67, June 2009.
Paper # ED2009-48 
Date of Issue 2009-06-04 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-48 Link to ES Tech. Rep. Archives: ED2009-48

Conference Information
Committee ED  
Conference Date 2009-06-11 - 2009-06-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2009-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT 
Sub Title (in English)  
Keyword(1) GaN-HEMT  
Keyword(2) Amplifier  
Keyword(3) Millimeter-wave  
Keyword(4) Three-terminal breakdown voltage  
Keyword(5) Pinched-off current  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Atsushi Yamada  
1st Author's Affiliation Fujitsu Limited and Fujitsu Laboratories Limited (Fujitsu and Fujitsu Labs.)
2nd Author's Name Kozo Makiyama  
2nd Author's Affiliation Fujitsu Limited and Fujitsu Laboratories Limited (Fujitsu and Fujitsu Labs.)
3rd Author's Name Toshihiro Ohki  
3rd Author's Affiliation Fujitsu Limited and Fujitsu Laboratories Limited (Fujitsu and Fujitsu Labs.)
4th Author's Name Masahito Kanamura  
4th Author's Affiliation Fujitsu Limited and Fujitsu Laboratories Limited (Fujitsu and Fujitsu Labs.)
5th Author's Name Kazukiyo Joshin  
5th Author's Affiliation Fujitsu Limited and Fujitsu Laboratories Limited (Fujitsu and Fujitsu Labs.)
6th Author's Name Kenji Imanishi  
6th Author's Affiliation Fujitsu Limited and Fujitsu Laboratories Limited (Fujitsu and Fujitsu Labs.)
7th Author's Name Naoki Hara  
7th Author's Affiliation Fujitsu Laboratories Limited (Fujitsu Labs.)
8th Author's Name Toshihide Kikkawa  
8th Author's Affiliation Fujitsu Limited and Fujitsu Laboratories Limited (Fujitsu and Fujitsu Labs.)
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Speaker Author-1 
Date Time 2009-06-12 11:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-48 
Volume (vol) vol.109 
Number (no) no.81 
Page pp.63-67 
#Pages
Date of Issue 2009-06-04 (ED) 


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