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| Presentation | 2009-06-19 14:10 Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers -- Formation of Insulator on Ge Substrate -- Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.)  SDM2009-35 Link to ES Tech. Rep. Archives: SDM2009-35 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach is to introduce the interlayer (IL) at the interface between high-k film and Ge. In this study, two kinds of high-k/ILs/Ge gate stack structures with HfGeN- and GeO2-ILs were fabricated and the electrical properties of the MIS capacitors were characterized. The obtained results are presented. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | high-k/Ge structure / gate insulating film / interlayer control / electrical characterization / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 87, SDM2009-35, pp. 51-56, June 2009. | |
| Paper # | SDM2009-35 | |
| Date of Issue | 2009-06-12 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-35 Link to ES Tech. Rep. Archives: SDM2009-35 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-06-19 - 2009-06-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers |
| Sub Title (in English) | Formation of Insulator on Ge Substrate |
| Keyword(1) | high-k/Ge structure |
| Keyword(2) | gate insulating film |
| Keyword(3) | interlayer control |
| Keyword(4) | electrical characterization |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroshi Nakashima |
| 1st Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 2nd Author's Name | Kana Hirayama |
| 2nd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 3rd Author's Name | Haigui Yang |
| 3rd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 4th Author's Name | Dong Wang |
| 4th Author's Affiliation | Kyushu University (Kyushu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-06-19 14:10:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2009-35 |
| Volume (vol) | vol.109 |
| Number (no) | no.87 |
| Page | pp.51-56 |
| #Pages | 6 |
| Date of Issue | 2009-06-12 (SDM) |
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