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Paper Abstract and Keywords
Presentation 2009-06-19 10:00
Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics -- Comparison with SiO2/Si Interface --
Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.) SDM2009-27 Link to ES Tech. Rep. Archives: SDM2009-27
Abstract (in Japanese) (See Japanese page) 
(in English) We have performed atomistic modeling of GeO2/Ge interface structure by using newly developed interatomic force-field for Ge, O mixed systems. The force-field for Ge, O systems is designed by modifying an existing potential function for Si, O systems which is developed in our previous work. The binding energies and distortion energies of bond angles in the Ge, O system is smaller than corresponding bonds and angles in the Si, O system as a whole, but only a Ge-O-Ge bridging oxygen angle is found to be harder than a Si-O-Si angle. Using these force-fields, we have modeled GeO2/Ge and SiO2/Si interface structures to investigate stress distribution, bond angle distribution, and defect density within the two oxide films. The present results show that the oxidation-induced strain is weaker in the GeO2 film than in the SiO2 film, and the defect density at the GeO2/Ge interface is lower than that at the SiO2/Si interface.
Keyword (in Japanese) (See Japanese page) 
(in English) Germanium / Thermal Oxide Film / Silicon / Molecular Dynamics / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 87, SDM2009-27, pp. 3-8, June 2009.
Paper # SDM2009-27 
Date of Issue 2009-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-27 Link to ES Tech. Rep. Archives: SDM2009-27

Conference Information
Committee SDM  
Conference Date 2009-06-19 - 2009-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics 
Sub Title (in English) Comparison with SiO2/Si Interface 
Keyword(1) Germanium  
Keyword(2) Thermal Oxide Film  
Keyword(3) Silicon  
Keyword(4) Molecular Dynamics  
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1st Author's Name Takanobu Watanabe  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Tomoya Onda  
2nd Author's Affiliation Waseda University (Waseda Univ.)
3rd Author's Name Ryo Tosaka  
3rd Author's Affiliation Waseda University (Waseda Univ.)
4th Author's Name Hideaki Yamamoto  
4th Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2009-06-19 10:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-27 
Volume (vol) vol.109 
Number (no) no.87 
Page pp.3-8 
#Pages
Date of Issue 2009-06-12 (SDM) 


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