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| Presentation | 2009-06-19 12:40 Thermal Stability of Ge MOS Devices -- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption -- Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA)  SDM2009-31 Link to ES Tech. Rep. Archives: SDM2009-31 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GeO(g) desorption temperature decreases with the increase in the ratio of GeO(II) in Ge oxide and is independent of the oxidation techniques. Since GeO(g) desorption is accompanied by H2O(g) desorption, it is appropriate to consider that Ge(OH)2 decomposes into GeO(g) and H2O(g). Although GeO(II) has a resistance against high concentration HF solution or HCl one, highly effective etching methods of Ge oxide, using HCl solution at high temperature has been demonstrated. Controlling Ge oxide, in particular GeO(II), is a key issue for the thermal stability of high-k/Ge MOS devices. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge / Ge oxygen / Ge monoxide / Ge dioxide / Ge hydroxide / Ge hydrotrichloride / Ge tetrachloride / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 87, SDM2009-31, pp. 27-31, June 2009. | |
| Paper # | SDM2009-31 | |
| Date of Issue | 2009-06-12 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-31 Link to ES Tech. Rep. Archives: SDM2009-31 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-06-19 - 2009-06-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Thermal Stability of Ge MOS Devices |
| Sub Title (in English) | Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption |
| Keyword(1) | Ge |
| Keyword(2) | Ge oxygen |
| Keyword(3) | Ge monoxide |
| Keyword(4) | Ge dioxide |
| Keyword(5) | Ge hydroxide |
| Keyword(6) | Ge hydrotrichloride |
| Keyword(7) | Ge tetrachloride |
| Keyword(8) | |
| 1st Author's Name | Yoshiki Kamata |
| 1st Author's Affiliation | MIRAI-TOSHIBA (MIRAI-TOSHIBA) |
| 2nd Author's Name | Akira Takashima |
| 2nd Author's Affiliation | TOSHIBA Corporation (TOSHIBA Corp) |
| 3rd Author's Name | Tsutomu Tezuka |
| 3rd Author's Affiliation | MIRAI-TOSHIBA (MIRAI-TOSHIBA) |
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| Speaker | Author-1 |
| Date Time | 2009-06-19 12:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2009-31 |
| Volume (vol) | vol.109 |
| Number (no) | no.87 |
| Page | pp.27-31 |
| #Pages | 5 |
| Date of Issue | 2009-06-12 (SDM) |
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