Paper Abstract and Keywords |
Presentation |
2009-07-17 14:10
Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) SDM2009-114 ICD2009-30 Link to ES Tech. Rep. Archives: SDM2009-114 ICD2009-30 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using perpendicular magnetic anisotropy materials. We confirmed its potentials of 0.2-mA and 2-ns writing with sufficient thermal stability, and also demonstrated good memory operations. The cell size of this MRAM was estimated to be around 0.1 um2. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories currently used in system LSI such as eSRAM and eDRAM. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MRAM / Perpendicular magnetic anisotropy / Domain wall / Write-current / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 133, SDM2009-114, pp. 91-95, July 2009. |
Paper # |
SDM2009-114 |
Date of Issue |
2009-07-09 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2009-114 ICD2009-30 Link to ES Tech. Rep. Archives: SDM2009-114 ICD2009-30 |
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