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Paper Abstract and Keywords
Presentation 2009-07-17 14:10
Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM
Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) SDM2009-114 ICD2009-30 Link to ES Tech. Rep. Archives: SDM2009-114 ICD2009-30
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using perpendicular magnetic anisotropy materials. We confirmed its potentials of 0.2-mA and 2-ns writing with sufficient thermal stability, and also demonstrated good memory operations. The cell size of this MRAM was estimated to be around 0.1 um2. The obtained properties indicate that this MRAM can replace conventional high-speed embedded memories currently used in system LSI such as eSRAM and eDRAM.
Keyword (in Japanese) (See Japanese page) 
(in English) MRAM / Perpendicular magnetic anisotropy / Domain wall / Write-current / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 133, SDM2009-114, pp. 91-95, July 2009.
Paper # SDM2009-114 
Date of Issue 2009-07-09 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF SDM2009-114 ICD2009-30 Link to ES Tech. Rep. Archives: SDM2009-114 ICD2009-30

Conference Information
Committee ICD SDM  
Conference Date 2009-07-16 - 2009-07-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2009-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM 
Sub Title (in English)  
Keyword(1) MRAM  
Keyword(2) Perpendicular magnetic anisotropy  
Keyword(3) Domain wall  
Keyword(4) Write-current  
Keyword(5)  
Keyword(6)  
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1st Author's Name Shunsuke Fukami  
1st Author's Affiliation NEC Corporation (NEC Corp.)
2nd Author's Name Tetsuhiro Suzuki  
2nd Author's Affiliation NEC Corporation (NEC Corp.)
3rd Author's Name Kiyokazu Nagahara  
3rd Author's Affiliation NEC Corporation (NEC Corp.)
4th Author's Name Norikazu Ohshima  
4th Author's Affiliation NEC Corporation (NEC Corp.)
5th Author's Name Yasuaki Ozaki  
5th Author's Affiliation NEC Electronics Corporation (NECEL Corp.)
6th Author's Name Shinsaku Saito  
6th Author's Affiliation NEC Corporation (NEC Corp.)
7th Author's Name Ryusuke Nebashi  
7th Author's Affiliation NEC Corporation (NEC Corp.)
8th Author's Name Noboru Sakimura  
8th Author's Affiliation NEC Corporation (NEC Corp.)
9th Author's Name Hiroaki Honjo  
9th Author's Affiliation NEC Corporation (NEC Corp.)
10th Author's Name Kaoru Mori  
10th Author's Affiliation NEC Corporation (NEC Corp.)
11th Author's Name Chuji Igarashi  
11th Author's Affiliation NEC Corporation (NEC Corp.)
12th Author's Name Sadahiko Miura  
12th Author's Affiliation NEC Corporation (NEC Corp.)
13th Author's Name Nobuyuki Ishiwata  
13th Author's Affiliation NEC Corporation (NEC Corp.)
14th Author's Name Tadahiko Sugibayashi  
14th Author's Affiliation NEC Corporation (NEC Corp.)
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Speaker Author-1 
Date Time 2009-07-17 14:10:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2009-114, ICD2009-30 
Volume (vol) vol.109 
Number (no) no.133(SDM), no.134(ICD) 
Page pp.91-95 
#Pages
Date of Issue 2009-07-09 (SDM, ICD) 


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