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| Presentation | 2009-08-10 15:30 Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer Shinichiro Suzuki, Akira Sengoku, Takuma Tsuji, Mitsunori Henmi, Yusuke Murata, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)  CPM2009-35 Link to ES Tech. Rep. Archives: CPM2009-35 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Interface state density was estimated from diode factor $n$ of SiC MIS Schottky diode. The interface state density was the order of $10^{12}$cm$^{-2}$eV$^{-1}$, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from $n$ was consistent to the value calculated from the capacitance voltage curve of SiO$_2$/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / Nitride / Interface / MIS Schottky / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 171, CPM2009-35, pp. 9-12, Aug. 2009. | |
| Paper # | CPM2009-35 | |
| Date of Issue | 2009-08-03 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2009-35 Link to ES Tech. Rep. Archives: CPM2009-35 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2009-08-10 - 2009-08-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hirosaki Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Electronic Component Parts and Materials, etc. |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2009-08-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | Nitride |
| Keyword(3) | Interface |
| Keyword(4) | MIS Schottky |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shinichiro Suzuki |
| 1st Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 2nd Author's Name | Akira Sengoku |
| 2nd Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 3rd Author's Name | Takuma Tsuji |
| 3rd Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 4th Author's Name | Mitsunori Henmi |
| 4th Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 5th Author's Name | Yusuke Murata |
| 5th Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 6th Author's Name | Tomohiko Yamakami |
| 6th Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 7th Author's Name | Rinpei Hayashibe |
| 7th Author's Affiliation | Shinshu University (Shinshu Univ.) |
| 8th Author's Name | Kiichi Kamimura |
| 8th Author's Affiliation | Shinshu University (Shinshu Univ.) |
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| Speaker | Author-8 |
| Date Time | 2009-08-10 15:30:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2009-35 |
| Volume (vol) | vol.109 |
| Number (no) | no.171 |
| Page | pp.9-12 |
| #Pages | 4 |
| Date of Issue | 2009-08-03 (CPM) |
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