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| Presentation | 2009-08-11 11:15 Effectiveness of New Deposition Method for Barrier Metal Applicable to Through Silicon Via -- Properties of ZrNx Film Formed at Low Temperature -- Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.)  CPM2009-44 Link to ES Tech. Rep. Archives: CPM2009-44 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A low process temperature as low as 200°C is one of the most important requirements for the metallization technology of the three-dimensional integration with through Si via (TSV). In the present study, we propose a new deposition method for preparing a thin nitride diffusion barrier applicable to TSV technology, in which sputtering of metal and following nitridation by radical species are combined. By means of this procedure, we can prepare a 5-nm thick ZrN film without substrate heating at temperature below 200°C. This film tolerated annealing at 500°C as a barrier without any interfacial layers formation, which performance is comparable to that of ZrN formed by reactive-sputtering. It is revealed that the proposed method is probably the unique method satisfying the requirements for TSV processes. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si-ULSI / through Si via / ZrN, / nitridation / diffusion barrier / low process temperature / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 171, CPM2009-44, pp. 57-60, Aug. 2009. | |
| Paper # | CPM2009-44 | |
| Date of Issue | 2009-08-03 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2009-44 Link to ES Tech. Rep. Archives: CPM2009-44 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2009-08-10 - 2009-08-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hirosaki Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Electronic Component Parts and Materials, etc. |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2009-08-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effectiveness of New Deposition Method for Barrier Metal Applicable to Through Silicon Via |
| Sub Title (in English) | Properties of ZrNx Film Formed at Low Temperature |
| Keyword(1) | Si-ULSI |
| Keyword(2) | through Si via |
| Keyword(3) | ZrN, |
| Keyword(4) | nitridation |
| Keyword(5) | diffusion barrier |
| Keyword(6) | low process temperature |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masaru Sato |
| 1st Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
| 2nd Author's Name | Mayumi B. Takeyama |
| 2nd Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
| 3rd Author's Name | Yuichiro Hayasaka |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Eiji Aoyagi |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Atsushi Noya |
| 5th Author's Affiliation | Kitami Institute of Technology (Kitami Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2009-08-11 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2009-44 |
| Volume (vol) | vol.109 |
| Number (no) | no.171 |
| Page | pp.57-60 |
| #Pages | 4 |
| Date of Issue | 2009-08-03 (CPM) |
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