Paper Abstract and Keywords |
Presentation |
2009-08-11 10:50
Properties of ZrBx Thin Film Applicable to Cu Interconnects in Si-ULSI Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-43 Link to ES Tech. Rep. Archives: CPM2009-43 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have examined characteristics of ZrB2 films and found a peculiar property that the resistivity of the film depends on its
kind of substrate, i.e., conductive or insulating. We speculate that this is ascribed to the difference of the texture of the ZrB2 film deposited
on SiO2/Si or Cu. The 3-nm thick ZrB2 film shows excellent barrier properties without structural change and intermixing at every interface.
We also examine the characterizations of ZrBx films with varying the composition ratio of Zr to B. The Zr-rich film (Zr/B=2) consists of a
main phase of ZrB2 and has the substrate dependent resistivity. We propose this film as a metallic capping layer on Cu interconnects. The
ZrBx film deposited on Cu shows excellent properties of good conductivity without any solid-phase reaction and/or diffusion at about
500°C. It is revealed that ZrBx films are an excellent candidate for the application to the extremely thin barrier as well as metal capping
materials in high-performance Cu metallization technology. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Cu interconnects / diffusion barrier / ZrB2 / low resistivity / metal capping layer / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 171, CPM2009-43, pp. 51-55, Aug. 2009. |
Paper # |
CPM2009-43 |
Date of Issue |
2009-08-03 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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CPM2009-43 Link to ES Tech. Rep. Archives: CPM2009-43 |
Conference Information |
Committee |
CPM |
Conference Date |
2009-08-10 - 2009-08-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hirosaki Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Electronic Component Parts and Materials, etc. |
Paper Information |
Registration To |
CPM |
Conference Code |
2009-08-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Properties of ZrBx Thin Film Applicable to Cu Interconnects in Si-ULSI |
Sub Title (in English) |
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Keyword(1) |
Cu interconnects |
Keyword(2) |
diffusion barrier |
Keyword(3) |
ZrB2 |
Keyword(4) |
low resistivity |
Keyword(5) |
metal capping layer |
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Keyword(7) |
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1st Author's Name |
Mayumi B. Takeyama |
1st Author's Affiliation |
Kitami Institute of Technology (Kitami Inst. of Tech.) |
2nd Author's Name |
Masaru Sato |
2nd Author's Affiliation |
Kitami Institute of Technology (Kitami Inst. of Tech.) |
3rd Author's Name |
Yuichiro Hayasaka |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Eiji Aoyagi |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Atsushi Noya |
5th Author's Affiliation |
Kitami Institute of Technology (Kitami Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2009-08-11 10:50:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2009-43 |
Volume (vol) |
vol.109 |
Number (no) |
no.171 |
Page |
pp.51-55 |
#Pages |
5 |
Date of Issue |
2009-08-03 (CPM) |