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Paper Abstract and Keywords
Presentation 2009-08-11 10:50
Properties of ZrBx Thin Film Applicable to Cu Interconnects in Si-ULSI
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-43 Link to ES Tech. Rep. Archives: CPM2009-43
Abstract (in Japanese) (See Japanese page) 
(in English) We have examined characteristics of ZrB2 films and found a peculiar property that the resistivity of the film depends on its
kind of substrate, i.e., conductive or insulating. We speculate that this is ascribed to the difference of the texture of the ZrB2 film deposited
on SiO2/Si or Cu. The 3-nm thick ZrB2 film shows excellent barrier properties without structural change and intermixing at every interface.
We also examine the characterizations of ZrBx films with varying the composition ratio of Zr to B. The Zr-rich film (Zr/B=2) consists of a
main phase of ZrB2 and has the substrate dependent resistivity. We propose this film as a metallic capping layer on Cu interconnects. The
ZrBx film deposited on Cu shows excellent properties of good conductivity without any solid-phase reaction and/or diffusion at about
500°C. It is revealed that ZrBx films are an excellent candidate for the application to the extremely thin barrier as well as metal capping
materials in high-performance Cu metallization technology.
Keyword (in Japanese) (See Japanese page) 
(in English) Cu interconnects / diffusion barrier / ZrB2 / low resistivity / metal capping layer / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 171, CPM2009-43, pp. 51-55, Aug. 2009.
Paper # CPM2009-43 
Date of Issue 2009-08-03 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF CPM2009-43 Link to ES Tech. Rep. Archives: CPM2009-43

Conference Information
Committee CPM  
Conference Date 2009-08-10 - 2009-08-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Hirosaki Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Electronic Component Parts and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2009-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Properties of ZrBx Thin Film Applicable to Cu Interconnects in Si-ULSI 
Sub Title (in English)  
Keyword(1) Cu interconnects  
Keyword(2) diffusion barrier  
Keyword(3) ZrB2  
Keyword(4) low resistivity  
Keyword(5) metal capping layer  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mayumi B. Takeyama  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
3rd Author's Name Yuichiro Hayasaka  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Eiji Aoyagi  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Atsushi Noya  
5th Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
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Speaker Author-1 
Date Time 2009-08-11 10:50:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2009-43 
Volume (vol) vol.109 
Number (no) no.171 
Page pp.51-55 
#Pages
Date of Issue 2009-08-03 (CPM) 


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