Paper Abstract and Keywords |
Presentation |
2009-10-30 09:00
Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-96 Link to ES Tech. Rep. Archives: CPM2009-96 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on Si(001) substrates using monomethylgermane (MMGe) were measured by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Ge and SiC dot layer was supposed to be flat, and the ratio of the Ge dots to the SiC dots was estimated with two layer model using results of STM and XPS measurements. However, the two layer model does not reflect the exact shape of the dots. In this study, structural evaluation was performed using a hemispherical-dot structure of Ge and SiC dots. Using the hemispherical-dot structure model, the average dot height was estimated to be 2.68nm and the dot ratio of Ge to SiC was estimated to be approximately 1/2.4. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge nano-dot / SiC nano-dot / monomethylgermane / STM / XPS / XPS / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 256, CPM2009-96, pp. 31-36, Oct. 2009. |
Paper # |
CPM2009-96 |
Date of Issue |
2009-10-22 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2009-96 Link to ES Tech. Rep. Archives: CPM2009-96 |
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