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Paper Abstract and Keywords
Presentation 2009-10-30 09:00
Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model
Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-96 Link to ES Tech. Rep. Archives: CPM2009-96
Abstract (in Japanese) (See Japanese page) 
(in English) Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on Si(001) substrates using monomethylgermane (MMGe) were measured by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Ge and SiC dot layer was supposed to be flat, and the ratio of the Ge dots to the SiC dots was estimated with two layer model using results of STM and XPS measurements. However, the two layer model does not reflect the exact shape of the dots. In this study, structural evaluation was performed using a hemispherical-dot structure of Ge and SiC dots. Using the hemispherical-dot structure model, the average dot height was estimated to be 2.68nm and the dot ratio of Ge to SiC was estimated to be approximately 1/2.4.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge nano-dot / SiC nano-dot / monomethylgermane / STM / XPS / XPS / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 256, CPM2009-96, pp. 31-36, Oct. 2009.
Paper # CPM2009-96 
Date of Issue 2009-10-22 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2009-96 Link to ES Tech. Rep. Archives: CPM2009-96

Conference Information
Committee CPM  
Conference Date 2009-10-29 - 2009-10-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Prefectural University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2009-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model 
Sub Title (in English)  
Keyword(1) Ge nano-dot  
Keyword(2) SiC nano-dot  
Keyword(3) monomethylgermane  
Keyword(4) STM  
Keyword(5) XPS  
Keyword(6) XPS  
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Keyword(8)  
1st Author's Name Tomoyoshi Kuroda  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
2nd Author's Name Takashi Otani  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
3rd Author's Name Ariyuki Kato  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
4th Author's Name Masasuke Takata  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
5th Author's Name Tadashi Akahane  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
6th Author's Name Kanji Yasui  
6th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
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Speaker Author-1 
Date Time 2009-10-30 09:00:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2009-96 
Volume (vol) vol.109 
Number (no) no.256 
Page pp.31-36 
#Pages
Date of Issue 2009-10-22 (CPM) 


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