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| Presentation | 2009-11-19 17:35 Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices -- Development from emitters into solar cells -- Kazuhide Kusakabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.)  ED2009-145 CPM2009-119 LQE2009-124 Link to ES Tech. Rep. Archives: ED2009-145 CPM2009-119 LQE2009-124 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For a development of photonic devices utilizing InN properties, it is necessary to control (1) the p-type conductivity in InN and In-rich InGaN, and (2) the structural perfection of quantum well structures. A new development of InN-based novel photonic detectors is proposed, based on our achievements of the p-type conductive control and the 1-monolayer-thick InN quantum wells. Especially, the InN/InGaN/GaN asymmetric quantum well structures, which have been recently investigated, are expected for application not only to emitters suppressing QCSE, but also to third generation ultrahigh-efficiency solar cells, and to infrared photo-detectors. In this article, a design concept and a feature of the photonic detectors are presented. When the InGaN tandem solar cells including 1ML-InN QWs as a photo-sensitizer are composed, theoretical evaluation shows that the maximum conversion efficiency reaches 56% for the 6 tandem structure (further 65 % under 250 suns). | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | 1ML-InN / InGaN alloys / Solar cell / Photo-sensitization / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 290, LQE2009-124, pp. 81-84, Nov. 2009. | |
| Paper # | LQE2009-124 | |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-145 CPM2009-119 LQE2009-124 Link to ES Tech. Rep. Archives: ED2009-145 CPM2009-119 LQE2009-124 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2009-11-19 - 2009-11-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2009-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices |
| Sub Title (in English) | Development from emitters into solar cells |
| Keyword(1) | 1ML-InN |
| Keyword(2) | InGaN alloys |
| Keyword(3) | Solar cell |
| Keyword(4) | Photo-sensitization |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Kazuhide Kusakabe |
| 1st Author's Affiliation | Chiba University (Chiba Univ.) |
| 2nd Author's Name | Yoshihiro Ishitani |
| 2nd Author's Affiliation | Chiba University (Chiba Univ.) |
| 3rd Author's Name | Akihiko Yoshikawa |
| 3rd Author's Affiliation | Chiba University (Chiba Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-11-19 17:35:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2009-145, CPM2009-119, LQE2009-124 |
| Volume (vol) | vol.109 |
| Number (no) | no.288(ED), no.289(CPM), no.290(LQE) |
| Page | pp.81-84 |
| #Pages | 4 |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) |
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