Paper Abstract and Keywords |
Presentation |
2009-11-19 11:40
Exciton emission mechanism in AlN epitaxial films Takeyoshi Onuma, Kouji Hazu (Tohoku Univ.), Takayuki Sota (Waseda Univ.), Akira Uedono (Univ. of Tsukuba), Shigefusa F. Chichibu (Tohoku Univ.) ED2009-134 CPM2009-108 LQE2009-113 Link to ES Tech. Rep. Archives: ED2009-134 CPM2009-108 LQE2009-113 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al$_2$O$_3$ substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (2$\times$10$^{8}$~cm$^{-2}$) AlN film. From the energy difference between the ground- and the first-excited states, the hydrogenic A-exciton binding energy in the compressively strained ($\Delta$$a/a$$\approx$$-$1.68\%) AlN was estimated to be 51 meV. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlN / Polarization / Reflectance / Cathodoluminescence / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 290, LQE2009-113, pp. 31-34, Nov. 2009. |
Paper # |
LQE2009-113 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-134 CPM2009-108 LQE2009-113 Link to ES Tech. Rep. Archives: ED2009-134 CPM2009-108 LQE2009-113 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2009-11-19 - 2009-11-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2009-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Exciton emission mechanism in AlN epitaxial films |
Sub Title (in English) |
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Keyword(1) |
AlN |
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Polarization |
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Reflectance |
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Cathodoluminescence |
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1st Author's Name |
Takeyoshi Onuma |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Kouji Hazu |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Takayuki Sota |
3rd Author's Affiliation |
Waseda University (Waseda Univ.) |
4th Author's Name |
Akira Uedono |
4th Author's Affiliation |
University of Tsukuba (Univ. of Tsukuba) |
5th Author's Name |
Shigefusa F. Chichibu |
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Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-11-19 11:40:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2009-134, CPM2009-108, LQE2009-113 |
Volume (vol) |
vol.109 |
Number (no) |
no.288(ED), no.289(CPM), no.290(LQE) |
Page |
pp.31-34 |
#Pages |
4 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
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