Paper Abstract and Keywords |
Presentation |
2009-11-19 09:50
MOVPE growth and optical properties of AlGaN on AlN/sapphire Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-130 CPM2009-104 LQE2009-109 Link to ES Tech. Rep. Archives: ED2009-130 CPM2009-104 LQE2009-109 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We performed growth of AlGaN on AlN/sapphire substrate as an underlying layer by low-pressure MOVPE with in-situ monitoring system, in order to fabricate a further high-quality and well-thickness controlled film, and controlled the film thickness. The Al content in AlGaN can be controlled by the growth temperature. Ultraviolet light of luminescence with wavelength that corresponded by changing the Al content was observed. Moreover, we fabricate the prototype ultraviolet-light source tube with the AlGaN film as a target for the electronic beam excitation. Luminous intensity was significantly improved by Si-doping, and optimization of the growth condition, and 247 nm deep-ultraviolet light was observed from the tube. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
LP-MOVPE / AlGaN / AlN / ultraviolet-light source / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 288, ED2009-130, pp. 9-12, Nov. 2009. |
Paper # |
ED2009-130 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
ED2009-130 CPM2009-104 LQE2009-109 Link to ES Tech. Rep. Archives: ED2009-130 CPM2009-104 LQE2009-109 |
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