Paper Abstract and Keywords |
Presentation |
2009-11-19 13:55
Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates Atsushi Kobayashi, Kazuma Shimomoto, Kohei Ueno, Tomofumi Kajima, Jitsuo Ohta (Univ. of Tokyo), Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo/JST) ED2009-137 CPM2009-111 LQE2009-116 Link to ES Tech. Rep. Archives: ED2009-137 CPM2009-111 LQE2009-116 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
ZnO has been regarded as an ideal substrate for epitaxial growth of nonpolar group III nitride films because its structural properties are quite similar to those of GaN. However, ZnO has not been used as the substrate due to its chemical instability under the conventional growth conditions of metal-organic vapor phase epitaxy. We have recently found that the use of “pulsed-laser-deposition room-temperature growth technique” enables us to fabricate abrupt nonplolar interfaces, and to solve the instability of ZnO. In this paper, we report that there exist anisotropic in-plane strains in m-plane InGaN films grown on ZnO substrates, which influence the optical polarization properties. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
nonpolar / epitaxy / InGaN / ZnO / PLD / room-temperature growth / strain / optical polarization |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 290, LQE2009-116, pp. 43-46, Nov. 2009. |
Paper # |
LQE2009-116 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2009-137 CPM2009-111 LQE2009-116 Link to ES Tech. Rep. Archives: ED2009-137 CPM2009-111 LQE2009-116 |
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