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| Presentation | 2009-11-29 15:30 Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations Akira Endoh, Issei Watanabe (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT)  ED2009-163 Link to ES Tech. Rep. Archives: ED2009-163 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | To achieve millimeter-wave and THz-wave operations of InP-based HEMTs, gate length Lg must be reduced. In addition, gate-channel distance d must be also reduced to suppress the short-channel effects. To reduce d, fabrication technique of recessed-gate structure is important. In this work, we carried out Monte Carlo (MC) simulations of 50-nm-gate lattice-matched In0.52Al0.48As/In0.53Ga0.47As HEMTs and clarified the effect of gate-recess structure on electron transport. In the condition of a constant recess-depth dre, electron velocity in the channel layer under the gate electrode increases with decreasing lateral recess-length lre. On the other hand, in the condition of a constant lre, electron velocity in the channel under the gate increases with increasing dre. The increase of electron velocity results from steeper lateral potential in the InGaAs channel layer around the drain-side end of the gate electrode. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InP-based HEMTs / In0.52Al0.48As/In0.53Ga0.47As / Gate-recess structure / Lateral recess-length / Recess-depth / Monte Carlo simulations / Electron velocity / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 313, ED2009-163, pp. 19-23, Nov. 2009. | |
| Paper # | ED2009-163 | |
| Date of Issue | 2009-11-22 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-163 Link to ES Tech. Rep. Archives: ED2009-163 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2009-11-29 - 2009-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka Science & Technology Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, THz-wave device and system |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-11-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations |
| Sub Title (in English) | |
| Keyword(1) | InP-based HEMTs |
| Keyword(2) | In0.52Al0.48As/In0.53Ga0.47As |
| Keyword(3) | Gate-recess structure |
| Keyword(4) | Lateral recess-length |
| Keyword(5) | Recess-depth |
| Keyword(6) | Monte Carlo simulations |
| Keyword(7) | Electron velocity |
| Keyword(8) | |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Takashi Mimura |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd. (NICT/Fujitsu Labs.) |
| 4th Author's Name | Toshiaki Matsui |
| 4th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
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| Speaker | Author-1 |
| Date Time | 2009-11-29 15:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-163 |
| Volume (vol) | vol.109 |
| Number (no) | no.313 |
| Page | pp.19-23 |
| #Pages | 5 |
| Date of Issue | 2009-11-22 (ED) |
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