Paper Abstract and Keywords |
Presentation |
2009-12-04 11:20
Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.) SDM2009-157 Link to ES Tech. Rep. Archives: SDM2009-157 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The hysteresis observed in the transfer characteristics of n-channel poly-Si TFTs are experimentally investigated and possible mechanisms are discussed. The hot holes generated by GIDL mechanism are injected into the gate oxide, and resulting trapped positive charges significantly reduce the off-state drain leakage current. These trapped holes can be erased by the on-current conduction through the thermal emission process, which is enhanced by the self-heating effect. The information about the self-heating characteristics and oxide defects can be obtained by measuring the hole emission characteristics under various bias conditions. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
poly-Si TFT / hysteresis / oxide hole trap / self-heating effect / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 321, SDM2009-157, pp. 35-38, Dec. 2009. |
Paper # |
SDM2009-157 |
Date of Issue |
2009-11-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2009-157 Link to ES Tech. Rep. Archives: SDM2009-157 |
Conference Information |
Committee |
SDM |
Conference Date |
2009-12-04 - 2009-12-04 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
NAIST |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Fabrication, Evaluation for Si Related Materials, |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-12-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs |
Sub Title (in English) |
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Keyword(1) |
poly-Si TFT |
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hysteresis |
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oxide hole trap |
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self-heating effect |
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1st Author's Name |
Yoshinari Kamakura |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Takashi Himukashi |
2nd Author's Affiliation |
Osaka University/Kansai University (Osaka Univ./Kansai Univ.) |
3rd Author's Name |
Hiroshi Tsuji |
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Osaka University (Osaka Univ.) |
4th Author's Name |
Kenji Taniguchi |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-12-04 11:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2009-157 |
Volume (vol) |
vol.109 |
Number (no) |
no.321 |
Page |
pp.35-38 |
#Pages |
4 |
Date of Issue |
2009-11-27 (SDM) |
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