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| Presentation | 2010-01-12 10:30 Fabricatioin and threshold voltage control of organic nonvolatile memory transistors Takashi Nakagawa, Tomoyuki Yokota, Tsuyoshi Sekitani, Ken Takeuchi (Tokyo Univ.), Ute Zschieschang, Hagen Klauk (MPI), Takao Someya (Tokyo Univ.)  OME2009-67 Link to ES Tech. Rep. Archives: OME2009-67 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have demonstrated to control threshold voltage (Vth) of the organic floating-gate transistors using self-assembled monolayer (SAM) for realizing organic nonvolatile memory array. For programming, -6 V is applied between the control gate and the source contact. To erase, +3 V is applied to discharge the floating gate and recover the initial threshold voltage. The charge retention time was about 104 s. The difference between Vth on program-state and on erase-state (ΔVth) is one of the most important factors for data retention. In this work, with changing the thickness of organic semiconductor pentacene from 10 to 90 nm, ΔVth can be systematically changed from 1.6 to 3 V. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Organic nonvolatile memory / Floating-gate / Threshold voltage control / Self-assembled monolayer / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 359, OME2009-67, pp. 7-11, Jan. 2010. | |
| Paper # | OME2009-67 | |
| Date of Issue | 2010-01-05 (OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OME2009-67 Link to ES Tech. Rep. Archives: OME2009-67 |
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| Conference Information | |
| Committee | OME |
| Conference Date | 2010-01-12 - 2010-01-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sensor, device, etc. |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2010-01-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabricatioin and threshold voltage control of organic nonvolatile memory transistors |
| Sub Title (in English) | |
| Keyword(1) | Organic nonvolatile memory |
| Keyword(2) | Floating-gate |
| Keyword(3) | Threshold voltage control |
| Keyword(4) | Self-assembled monolayer |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Takashi Nakagawa |
| 1st Author's Affiliation | Tokyo University (Tokyo Univ.) |
| 2nd Author's Name | Tomoyuki Yokota |
| 2nd Author's Affiliation | Tokyo University (Tokyo Univ.) |
| 3rd Author's Name | Tsuyoshi Sekitani |
| 3rd Author's Affiliation | Tokyo University (Tokyo Univ.) |
| 4th Author's Name | Ken Takeuchi |
| 4th Author's Affiliation | Tokyo University (Tokyo Univ.) |
| 5th Author's Name | Ute Zschieschang |
| 5th Author's Affiliation | Max Planck Institute for Solid State Research (MPI) |
| 6th Author's Name | Hagen Klauk |
| 6th Author's Affiliation | Max Planck Institute for Solid State Research (MPI) |
| 7th Author's Name | Takao Someya |
| 7th Author's Affiliation | Tokyo University (Tokyo Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-01-12 10:30:00 |
| Presentation Time | 25 minutes |
| Registration for | OME |
| Paper # | OME2009-67 |
| Volume (vol) | vol.109 |
| Number (no) | no.359 |
| Page | pp.7-11 |
| #Pages | 5 |
| Date of Issue | 2010-01-05 (OME) |
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