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Paper Abstract and Keywords
Presentation 2010-02-22 14:50
MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) ED2009-200 SDM2009-197 Link to ES Tech. Rep. Archives: ED2009-200 SDM2009-197
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN stripes. In the case of non-polar crystal, InGaN MQW at the edge region was thicker than the center region. On the other hand, we got uniform thickness on semi-polar crystals. We simulated the diffusion process in gas phase and estimated the diffusion length of chemical species on each facets. The estimated results suggested that the non-uniformity of thickness was attributed to the chemical source diffusion from vapor phase. While CL spectra showed broad InGaN peak, there were no difference between the center and edge region. We concluded that non-uniformity of thickness and/or composition might be caused from the vapor diffusion in the selective growth on three dimensional structure.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN / semi-polar / non-polar / selective growth / MOVPE / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 422, ED2009-200, pp. 23-28, Feb. 2010.
Paper # ED2009-200 
Date of Issue 2010-02-15 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2009-200 SDM2009-197 Link to ES Tech. Rep. Archives: ED2009-200 SDM2009-197

Conference Information
Committee ED SDM  
Conference Date 2010-02-22 - 2010-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Seinen-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nano Device and Related Technology 
Paper Information
Registration To ED 
Conference Code 2010-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE 
Sub Title (in English)  
Keyword(1) InGaN  
Keyword(2) semi-polar  
Keyword(3) non-polar  
Keyword(4) selective growth  
Keyword(5) MOVPE  
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1st Author's Name Tomoyuki Tanikawa  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Yoshio Honda  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Masahito Yamaguchi  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2010-02-22 14:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-200, SDM2009-197 
Volume (vol) vol.109 
Number (no) no.422(ED), no.423(SDM) 
Page pp.23-28 
#Pages
Date of Issue 2010-02-15 (ED, SDM) 


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