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| Presentation | 2010-02-22 15:40 Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)  ED2009-202 SDM2009-199 Link to ES Tech. Rep. Archives: ED2009-202 SDM2009-199 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report a novel technique for the integration of planer-type single-electron transistors (SETs) based on nanogaps using electromigration scheme, which is caused by field emission current. We call this method “activation”. Using the activation method, the electrical properties of the nanogaps can be controlled by only adjusting the magnitude of the applied current during the activation process. Furthermore, we are easily able to obtain the SETs. The integration was achieved by passing a large electrical current through two initial Ni nanogap electrodes connected in series. The initial Ni nanogap electrodes with the separation of a few tens of nanometers were fabricated by conventional electron-beam lithography and lift-off process. The tunnel resistances of two nanogaps, which were both simultaneously activated, were decreased from the order of 100 TΩ to 1 MΩ with increasing the preset current Is from 1 nA to 30 µA. SETs were both simultaneously formed using the activation, and current-voltage (I-V) characteristics exhibited clear suppression of conductance near zero bias voltage known as the Coulomb Blockade. Coulomb blockade voltage of each device was also obviously modulated by the gate voltage. The charging energy of both SETs decreased simultaneously with increasing the preset current. This tendency was quite similar to those of individually activated SETs. These results clearly indicate that the activation procedure allows us to easily and simply integrate planar-type Ni-based SETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | electromigration / field emission current / nanogap / single-electron transistor / integration / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 422, ED2009-202, pp. 35-39, Feb. 2010. | |
| Paper # | ED2009-202 | |
| Date of Issue | 2010-02-15 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-202 SDM2009-199 Link to ES Tech. Rep. Archives: ED2009-202 SDM2009-199 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-02-22 - 2010-02-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken-Seinen-Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nano Device and Related Technology |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration |
| Sub Title (in English) | |
| Keyword(1) | electromigration |
| Keyword(2) | field emission current |
| Keyword(3) | nanogap |
| Keyword(4) | single-electron transistor |
| Keyword(5) | integration |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shunsuke Ueno |
| 1st Author's Affiliation | Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.) |
| 2nd Author's Name | Yusuke Tomoda |
| 2nd Author's Affiliation | Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.) |
| 3rd Author's Name | Watari Kume |
| 3rd Author's Affiliation | Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.) |
| 4th Author's Name | Michinobu Hanada |
| 4th Author's Affiliation | Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.) |
| 5th Author's Name | Kazutoshi Takiya |
| 5th Author's Affiliation | Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.) |
| 6th Author's Name | Jun-ichi Shirakashi |
| 6th Author's Affiliation | Tokyo University of Agriculture and Technology (Tokyo Univ. of Agr. & Tech.) |
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| Speaker | Author-1 |
| Date Time | 2010-02-22 15:40:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-202, SDM2009-199 |
| Volume (vol) | vol.109 |
| Number (no) | no.422(ED), no.423(SDM) |
| Page | pp.35-39 |
| #Pages | 5 |
| Date of Issue | 2010-02-15 (ED, SDM) |
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