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| Presentation | 2010-02-22 13:50 Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.)  ED2009-198 SDM2009-195 Link to ES Tech. Rep. Archives: ED2009-198 SDM2009-195 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Stochastic resonance in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance weak-signal response. When weak pulse trains were given to the gate of the CNT-FET operating in sub-threshold region, the correlation between the input-pulse and source-drain current increased by adding noise with optimized intensity. Moreover, enhancement of the correlation was observed in a summing network of the CNT-FETs. It was also found that the peak width of correlation coefficient also became wider, indicating that the summing CNT-FET networks were robust against noise. Therefore, the summing CNT-FET networks based on stochastic resonance will be a promising candidate for highly sensitive label-free sensors. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | carbon nanotubes / field-effect transistors / stochastic resonance / noise / signal enhancement / correlation / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 422, ED2009-198, pp. 11-15, Feb. 2010. | |
| Paper # | ED2009-198 | |
| Date of Issue | 2010-02-15 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-198 SDM2009-195 Link to ES Tech. Rep. Archives: ED2009-198 SDM2009-195 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-02-22 - 2010-02-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken-Seinen-Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nano Device and Related Technology |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors |
| Sub Title (in English) | |
| Keyword(1) | carbon nanotubes |
| Keyword(2) | field-effect transistors |
| Keyword(3) | stochastic resonance |
| Keyword(4) | noise |
| Keyword(5) | signal enhancement |
| Keyword(6) | correlation |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasufumi Hakamata |
| 1st Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.) |
| 2nd Author's Name | Yasuhide Ohno |
| 2nd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.) |
| 3rd Author's Name | Kenzo Maehashi |
| 3rd Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.) |
| 4th Author's Name | Seiya Kasai |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido Univ. (RCIQE Hokkaido Univ.) |
| 5th Author's Name | Koichi Inoue |
| 5th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.) |
| 6th Author's Name | Kazuhiko Matsumoto |
| 6th Author's Affiliation | The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-02-22 13:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-198, SDM2009-195 |
| Volume (vol) | vol.109 |
| Number (no) | no.422(ED), no.423(SDM) |
| Page | pp.11-15 |
| #Pages | 5 |
| Date of Issue | 2010-02-15 (ED, SDM) |
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