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Paper Abstract and Keywords
Presentation 2010-02-22 13:50
Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors
Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.) ED2009-198 SDM2009-195 Link to ES Tech. Rep. Archives: ED2009-198 SDM2009-195
Abstract (in Japanese) (See Japanese page) 
(in English) Stochastic resonance in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance weak-signal response. When weak pulse trains were given to the gate of the CNT-FET operating in sub-threshold region, the correlation between the input-pulse and source-drain current increased by adding noise with optimized intensity. Moreover, enhancement of the correlation was observed in a summing network of the CNT-FETs. It was also found that the peak width of correlation coefficient also became wider, indicating that the summing CNT-FET networks were robust against noise. Therefore, the summing CNT-FET networks based on stochastic resonance will be a promising candidate for highly sensitive label-free sensors.
Keyword (in Japanese) (See Japanese page) 
(in English) carbon nanotubes / field-effect transistors / stochastic resonance / noise / signal enhancement / correlation / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 422, ED2009-198, pp. 11-15, Feb. 2010.
Paper # ED2009-198 
Date of Issue 2010-02-15 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-198 SDM2009-195 Link to ES Tech. Rep. Archives: ED2009-198 SDM2009-195

Conference Information
Committee ED SDM  
Conference Date 2010-02-22 - 2010-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken-Seinen-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Nano Device and Related Technology 
Paper Information
Registration To ED 
Conference Code 2010-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors 
Sub Title (in English)  
Keyword(1) carbon nanotubes  
Keyword(2) field-effect transistors  
Keyword(3) stochastic resonance  
Keyword(4) noise  
Keyword(5) signal enhancement  
Keyword(6) correlation  
Keyword(7)  
Keyword(8)  
1st Author's Name Yasufumi Hakamata  
1st Author's Affiliation The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.)
2nd Author's Name Yasuhide Ohno  
2nd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.)
3rd Author's Name Kenzo Maehashi  
3rd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.)
4th Author's Name Seiya Kasai  
4th Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido Univ. (RCIQE Hokkaido Univ.)
5th Author's Name Koichi Inoue  
5th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.)
6th Author's Name Kazuhiko Matsumoto  
6th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka Univ. (ISIR Osaka Univ.)
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Speaker Author-1 
Date Time 2010-02-22 13:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-198, SDM2009-195 
Volume (vol) vol.109 
Number (no) no.422(ED), no.423(SDM) 
Page pp.11-15 
#Pages
Date of Issue 2010-02-15 (ED, SDM) 


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