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| Presentation | 2010-02-22 15:15 Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.)  ED2009-201 SDM2009-198 Link to ES Tech. Rep. Archives: ED2009-201 SDM2009-198 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We investigated formation of Si nanocrystals in SiOx (1.0 < x < 1.9) films induced by millisecond annealing using thermal plasma jet (TPJ). After TPJ annealing, photoluminescence (PL) at room temperature was remarkably increased, and the maximum intensity was observed from x = 1.7 sample. The PL peak at ~950 nm is suggested ~5 nm sized Si nanocrystals. Then Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by TPJ annealing of SiO2/SiOx/SiO2/Si(100) stacked structure. The MOS capacitors showed clear hysteresis of 6.8 V in capacitance-voltage (CV) characteristics after TPJ annealing. Si nanocrystals and/or the Si nanocrystal/SiO2 interfaces work as the charging nodes for electrons and holes. TPJ annealing of SiO2/SiOx/SiO2 stack has a potential to realize non-volatile TFT memories on low heat resistant substrates. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si Nanocrystal / Non-volatile Memory / Thermal Plasma Jet / Rapid Thermal Annealing / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 423, SDM2009-198, pp. 29-33, Feb. 2010. | |
| Paper # | SDM2009-198 | |
| Date of Issue | 2010-02-15 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-201 SDM2009-198 Link to ES Tech. Rep. Archives: ED2009-201 SDM2009-198 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-02-22 - 2010-02-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken-Seinen-Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nano Device and Related Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory |
| Sub Title (in English) | |
| Keyword(1) | Si Nanocrystal |
| Keyword(2) | Non-volatile Memory |
| Keyword(3) | Thermal Plasma Jet |
| Keyword(4) | Rapid Thermal Annealing |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tatsuya Okada |
| 1st Author's Affiliation | University of the Ryukyus (Univ. of the Ryukyus) |
| 2nd Author's Name | Seiichiro Higashi |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Katsunori Makihara |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Yasuo Hiroshige |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-02-22 15:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | ED2009-201, SDM2009-198 |
| Volume (vol) | vol.109 |
| Number (no) | no.422(ED), no.423(SDM) |
| Page | pp.29-33 |
| #Pages | 5 |
| Date of Issue | 2010-02-15 (ED, SDM) |
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