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| Presentation | 2010-02-22 14:15 Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.)  ED2009-199 SDM2009-196 Link to ES Tech. Rep. Archives: ED2009-199 SDM2009-196 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Stochastic resonance (SR) in single-electron charging and discharging process on quantum dots (QDs) is demonstrated theoretically and its behaviors are analyzed. The SR, in which response of a system is enhanced by fluctuation, has a possibility to solve thermal fluctuation problem in single electron systems. The single electron dynamics is described by a master equation with Poisson-type single electron tunneling rate and it is solved analytically. This analysis demonstrates the single electron SR in a quantum dot system. Deduced formula quantitatively reproduces the response obtained by a single electron device simulator, verifying the validity of the analysis. Correlation between the single electron SR response and device parameters of the QD system is clarified. Experiment observation of the single electron SR is also mentioned. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Stochastic Resonance / Single Electron / Quantum Dot / Thermal Fluctuation / Single-electron Tunneling / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 422, ED2009-199, pp. 17-21, Feb. 2010. | |
| Paper # | ED2009-199 | |
| Date of Issue | 2010-02-15 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-199 SDM2009-196 Link to ES Tech. Rep. Archives: ED2009-199 SDM2009-196 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-02-22 - 2010-02-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken-Seinen-Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional Nano Device and Related Technology |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots |
| Sub Title (in English) | |
| Keyword(1) | Stochastic Resonance |
| Keyword(2) | Single Electron |
| Keyword(3) | Quantum Dot |
| Keyword(4) | Thermal Fluctuation |
| Keyword(5) | Single-electron Tunneling |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Seiya Kasai |
| 1st Author's Affiliation | Hokkaido University/PRESTO, JST (Hokkaido Univ/JST) |
| 2nd Author's Name | Yuta Shiratori |
| 2nd Author's Affiliation | Hokkaido Universty (Hokkaido Univ.) |
| 3rd Author's Name | Kensuke Miura |
| 3rd Author's Affiliation | Hokkaido Universty (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-02-22 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-199, SDM2009-196 |
| Volume (vol) | vol.109 |
| Number (no) | no.422(ED), no.423(SDM) |
| Page | pp.17-21 |
| #Pages | 5 |
| Date of Issue | 2010-02-15 (ED, SDM) |
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