Paper Abstract and Keywords |
Presentation |
2010-04-23 10:45
Organic gate FETs for charactrizing carrier transport in polycrystalline Si Masaki Hashimoto, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) ED2010-14 Link to ES Tech. Rep. Archives: ED2010-14 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated organic gate Si FETs with Schottky contacts with a temperature of less than 150ºC to extract carrier transport properties crossing a single grain boundary in polycrystalline Si. The low-temperature fabrication process is indispensable to prevent deterioration of the FET at the boundary due to thermal diffusions of metallic impurities. We obtained a field effect mobility of 84.2cn2/Vs with a LSI grade single crystalline Si wafer while that crossing the grain boundary was 3.36cm2/Vs. Moreover we measured temperature dependence of the field effect mobility and estimated the energy barrier as 0.21 eV. The presented method is an effective measure to investigate the energy barrier of the grain boundary for the development of high performance thin film transistors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Polycrystalline Silicon / FET / grain boundary / carrier transport / PMMA / Schottky contact / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 11, ED2010-14, pp. 61-65, April 2010. |
Paper # |
ED2010-14 |
Date of Issue |
2010-04-15 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-14 Link to ES Tech. Rep. Archives: ED2010-14 |
Conference Information |
Committee |
ED |
Conference Date |
2010-04-22 - 2010-04-23 |
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Paper Information |
Registration To |
ED |
Conference Code |
2010-04-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Organic gate FETs for charactrizing carrier transport in polycrystalline Si |
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Keyword(1) |
Polycrystalline Silicon |
Keyword(2) |
FET |
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grain boundary |
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carrier transport |
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PMMA |
Keyword(6) |
Schottky contact |
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1st Author's Name |
Masaki Hashimoto |
1st Author's Affiliation |
Yamagata University (Yamagata Univ.) |
2nd Author's Name |
Takahiko Suzuki |
2nd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
3rd Author's Name |
Fumihiko Hirose |
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Yamagata University (Yamagata Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-04-23 10:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-14 |
Volume (vol) |
vol.110 |
Number (no) |
no.11 |
Page |
pp.61-65 |
#Pages |
5 |
Date of Issue |
2010-04-15 (ED) |