Paper Abstract and Keywords |
Presentation |
2010-05-13 16:00
11W output power C-X band broadband high power balanced amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (MELCO) MW2010-17 Link to ES Tech. Rep. Archives: MW2010-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high power amplifier, which features high power and high gain C-X band 83% relative bandwidth.
It was found that, a balanced amplifier is absolute stability, when regions(1>|Γ|>0.71) of input and output load impedances for of a single-end amplifier of a broadband amplifier are unstable region.
A C-X band GaN HEMT HIC balanced amplifier was manufactured and measured at 40V drain voltage. More than 11W output power and more than 8.9dB small signal gain and 20% PAE (Power Added Efficiency) were obtained at 83% relative bandwidth. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Broadband amplifier / GaN HEMT / power amplifier / microwave / band width / balanced amplifier / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 25, MW2010-17, pp. 17-22, May 2010. |
Paper # |
MW2010-17 |
Date of Issue |
2010-05-06 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
MW2010-17 Link to ES Tech. Rep. Archives: MW2010-17 |
Conference Information |
Committee |
MW |
Conference Date |
2010-05-13 - 2010-05-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
University of Hyogo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Microwave Technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2010-05-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
11W output power C-X band broadband high power balanced amplifier using GaN HEMT |
Sub Title (in English) |
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Keyword(1) |
Broadband amplifier |
Keyword(2) |
GaN HEMT |
Keyword(3) |
power amplifier |
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microwave |
Keyword(5) |
band width |
Keyword(6) |
balanced amplifier |
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1st Author's Name |
Eigo Kuwata |
1st Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
2nd Author's Name |
Koji Yamanaka |
2nd Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
3rd Author's Name |
Tasuku Kirikoshi |
3rd Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
4th Author's Name |
Akira Inoue |
4th Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
5th Author's Name |
Yoshihito Hirano |
5th Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
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Speaker |
Author-1 |
Date Time |
2010-05-13 16:00:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
MW2010-17 |
Volume (vol) |
vol.110 |
Number (no) |
no.25 |
Page |
pp.17-22 |
#Pages |
6 |
Date of Issue |
2010-05-06 (MW) |