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| Presentation | 2010-06-18 10:25 Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ)  ED2010-43 Link to ES Tech. Rep. Archives: ED2010-43 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A resonant tunneling diode (RTD) is an active device with negative differential resistance operating up to THz region in principle. However, parasitic resistances, inductances and capacitances determine not only a limit of operating frequency but also condition of relaxation oscillations in output of RTD. A purpose of this paper is to clarify the condition suppressing the relaxation oscillation by modeling RTD with an equivalent circuit of RTD including DC supply and a stabilizer circuit. Especially, we analyze the difference of characteristics between schottky barrier diode and a resistance employed as the stabilizer circuit. In addition, relaxation time toward a steady operating point is also investigated. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Resonant tunneling diode / Stabilizer Circuit / Phase space / Relaxation oscillation / Negative differential resistance / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 80, ED2010-43, pp. 53-58, June 2010. | |
| Paper # | ED2010-43 | |
| Date of Issue | 2010-06-10 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-43 Link to ES Tech. Rep. Archives: ED2010-43 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2010-06-17 - 2010-06-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | JAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process and device technology of semiconductors (surface, interface, reliability, etc.) |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2010-06-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region |
| Sub Title (in English) | |
| Keyword(1) | Resonant tunneling diode |
| Keyword(2) | Stabilizer Circuit |
| Keyword(3) | Phase space |
| Keyword(4) | Relaxation oscillation |
| Keyword(5) | Negative differential resistance |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yosuke Itagaki |
| 1st Author's Affiliation | Tokyo Metropolitan University (Tokyo Metro.Univ) |
| 2nd Author's Name | Kiyoto Asakawa |
| 2nd Author's Affiliation | Tokyo Metropolitan University (Tokyo Metro.Univ) |
| 3rd Author's Name | Hideaki Shin-ya |
| 3rd Author's Affiliation | Tokyo Metropolitan University (Tokyo Metro.Univ) |
| 4th Author's Name | Mitsufumi Saito |
| 4th Author's Affiliation | Tokyo Metropolitan University (Tokyo Metro.Univ) |
| 5th Author's Name | Michihiko Suhara |
| 5th Author's Affiliation | Tokyo Metropolitan University (Tokyo Metro.Univ) |
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| Speaker | Author-1 |
| Date Time | 2010-06-18 10:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2010-43 |
| Volume (vol) | vol.110 |
| Number (no) | no.80 |
| Page | pp.53-58 |
| #Pages | 6 |
| Date of Issue | 2010-06-10 (ED) |
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