Paper Abstract and Keywords |
Presentation |
2010-06-22 12:05
Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms DongHun Lee, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2010-39 Link to ES Tech. Rep. Archives: SDM2010-39 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Germanium (Ge) is highlighted as a candidate semiconductor of high speed transistor because of its higher carrier mobility than that of Si. However, it is well known that Ge surface is not passivated easily by wet chemical treatment or by hydrogen treatment unlike Si surface. In this study, we have theoretically simulated the chemical reactivity of various atoms with Ge(100) surface for searching adequate ambient treatment by using molecular orbital method. As the result, we have confirmed that Ge surface is more stable by fluorine and boron than hydrogen. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Semi-empirical molecular / Mopac2009 / Ge / Surface treatment / Fluorine treatment / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 90, SDM2010-39, pp. 33-37, June 2010. |
Paper # |
SDM2010-39 |
Date of Issue |
2010-06-15 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2010-39 Link to ES Tech. Rep. Archives: SDM2010-39 |
Conference Information |
Committee |
SDM |
Conference Date |
2010-06-22 - 2010-06-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2010-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms |
Sub Title (in English) |
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Keyword(1) |
Semi-empirical molecular |
Keyword(2) |
Mopac2009 |
Keyword(3) |
Ge |
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Surface treatment |
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Fluorine treatment |
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1st Author's Name |
DongHun Lee |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Takeshi Kanashima |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Masanori Okuyama |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-06-22 12:05:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2010-39 |
Volume (vol) |
vol.110 |
Number (no) |
no.90 |
Page |
pp.33-37 |
#Pages |
5 |
Date of Issue |
2010-06-15 (SDM) |