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Paper Abstract and Keywords
Presentation 2010-07-02 10:35
A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric
Joseph Freedsman, Arata Watanabe, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.) ED2010-106 SDM2010-107 Link to ES Tech. Rep. Archives: ED2010-106 SDM2010-107
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
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Reference Info. IEICE Tech. Rep., vol. 110, no. 109, ED2010-106, pp. 245-248, June 2010.
Paper # ED2010-106 
Date of Issue 2010-06-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-106 SDM2010-107 Link to ES Tech. Rep. Archives: ED2010-106 SDM2010-107

Conference Information
Committee ED SDM  
Conference Date 2010-06-30 - 2010-07-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. of Tech. Ookayama Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2010-06-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric 
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1st Author's Name Joseph Freedsman  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Arata Watanabe  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Lawrence Selvaraj  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
4th Author's Name Takashi Egawa  
4th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Date Time 2010-07-02 10:35:00 
Presentation Time 15 minutes 
Registration for ED 
Paper # ED2010-106, SDM2010-107 
Volume (vol) vol.110 
Number (no) no.109(ED), no.110(SDM) 
Page pp.245-248 
#Pages
Date of Issue 2010-06-23 (ED, SDM) 


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