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Paper Abstract and Keywords
Presentation 2010-07-30 09:55
Atomic layer deposition (ALD) of vanadium nitride films using TDEAV
Mayumi B. Takeyama, Masaru Sato (kitami Inst. of Tech.), Hiroshi Sudoh, Hideaki Machida (Gas-phase Growth Ltd.), Shun Ito, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami inst. of tech.) CPM2010-37 Link to ES Tech. Rep. Archives: CPM2010-37
Abstract (in Japanese) (See Japanese page) 
(in English) An extremely thin barrier deposited at a low temperature is desired in Cu interconnects of 32 nm node technologies. We propose the VNx barrier grown by atomic layer deposition using tetrakisdiethylamidovanadium (TDEAV) and NH3 as precursors, because we already demonsrated the usefulness of the VNx barrier deposited by reactive sputtering. In this study, we mainly examine the ALD growth condition of the VNx barrier. As a result, we can demonstrate that the VNx film is deposited at a low temperature of ~190 °C by ALD growth without the incubation time, and the growth rate is about 0.1nm/cycle. These results reveal that the ALD-VNx barrier in this study is one of the superior barriers examined so far.
Keyword (in Japanese) (See Japanese page) 
(in English) Cu interconnects / extremely thin barrier / TDEAV / atomic layer deposition / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 154, CPM2010-37, pp. 35-38, July 2010.
Paper # CPM2010-37 
Date of Issue 2010-07-22 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2010-37 Link to ES Tech. Rep. Archives: CPM2010-37

Conference Information
Committee CPM  
Conference Date 2010-07-29 - 2010-07-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Michino-Eki Shari Meeting Room 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2010-07-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Atomic layer deposition (ALD) of vanadium nitride films using TDEAV 
Sub Title (in English)  
Keyword(1) Cu interconnects  
Keyword(2) extremely thin barrier  
Keyword(3) TDEAV  
Keyword(4) atomic layer deposition  
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1st Author's Name Mayumi B. Takeyama  
1st Author's Affiliation Kitami Institute of Technology (kitami Inst. of Tech.)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Kitami Institute of Technology (kitami Inst. of Tech.)
3rd Author's Name Hiroshi Sudoh  
3rd Author's Affiliation Gas-phase Growth Ltd. (Gas-phase Growth Ltd.)
4th Author's Name Hideaki Machida  
4th Author's Affiliation Gas-phase Growth Ltd. (Gas-phase Growth Ltd.)
5th Author's Name Shun Ito  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Eiji Aoyagi  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Atsushi Noya  
7th Author's Affiliation Kitami Institute of Technology (kitami inst. of tech.)
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Speaker Author-1 
Date Time 2010-07-30 09:55:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2010-37 
Volume (vol) vol.110 
Number (no) no.154 
Page pp.35-38 
#Pages
Date of Issue 2010-07-22 (CPM) 


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