Paper Abstract and Keywords |
Presentation |
2010-07-30 09:55
Atomic layer deposition (ALD) of vanadium nitride films using TDEAV Mayumi B. Takeyama, Masaru Sato (kitami Inst. of Tech.), Hiroshi Sudoh, Hideaki Machida (Gas-phase Growth Ltd.), Shun Ito, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami inst. of tech.) CPM2010-37 Link to ES Tech. Rep. Archives: CPM2010-37 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
An extremely thin barrier deposited at a low temperature is desired in Cu interconnects of 32 nm node technologies. We propose the VNx barrier grown by atomic layer deposition using tetrakisdiethylamidovanadium (TDEAV) and NH3 as precursors, because we already demonsrated the usefulness of the VNx barrier deposited by reactive sputtering. In this study, we mainly examine the ALD growth condition of the VNx barrier. As a result, we can demonstrate that the VNx film is deposited at a low temperature of ~190 °C by ALD growth without the incubation time, and the growth rate is about 0.1nm/cycle. These results reveal that the ALD-VNx barrier in this study is one of the superior barriers examined so far. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Cu interconnects / extremely thin barrier / TDEAV / atomic layer deposition / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 154, CPM2010-37, pp. 35-38, July 2010. |
Paper # |
CPM2010-37 |
Date of Issue |
2010-07-22 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2010-37 Link to ES Tech. Rep. Archives: CPM2010-37 |