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| Presentation | 2010-07-30 09:30 Low temperature of deposition of ZrNx film using radical reaction Masaru Sato, Mayumi B. Takeyama (kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami Inst. of Tech.)  CPM2010-36 Link to ES Tech. Rep. Archives: CPM2010-36 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Recently, an increase in the integration density of the Si-ULSI system is realized in the 3-D packaging technology. A through-silicon-via (TSV) is an important constituent technology to realize the 3D integration. This requires a deposition process of diffusion barriers at low temperatures if we choose a promising ‘via last process’. We have developed a new deposition method of preparing metal-nitrides at low temperatures, which consists of sputter-deposition of a metal film and subsequent nitride formation assisted by radical species generated by catalytic cracking of NH$_3$ molecules with a heated W-wire. In this study, we successfully prepared ZrN$_x$ films by the proposed method without substrate heating at a temperature as low as 200 °C or less. The characteristics of the obtained ZrN$_x$ film are good as comparable to those by reactive-sputtering. A high performance of prepared ZrN$_x$ diffusion barrier is also demonstrated. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si-ULSI / through-silicon-via / diffusion barriers / ZrN / radical species / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 154, CPM2010-36, pp. 29-34, July 2010. | |
| Paper # | CPM2010-36 | |
| Date of Issue | 2010-07-22 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2010-36 Link to ES Tech. Rep. Archives: CPM2010-36 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2010-07-29 - 2010-07-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Michino-Eki Shari Meeting Room |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2010-07-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low temperature of deposition of ZrNx film using radical reaction |
| Sub Title (in English) | |
| Keyword(1) | Si-ULSI |
| Keyword(2) | through-silicon-via |
| Keyword(3) | diffusion barriers |
| Keyword(4) | ZrN |
| Keyword(5) | radical species |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masaru Sato |
| 1st Author's Affiliation | Kitami Institute of Technology (kitami Inst. of Tech.) |
| 2nd Author's Name | Mayumi B. Takeyama |
| 2nd Author's Affiliation | Kitami Institute of Technology (kitami Inst. of Tech.) |
| 3rd Author's Name | Yuichiro Hayasaka |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Eiji Aoyagi |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Atsushi Noya |
| 5th Author's Affiliation | Kitami Institute of Technology (kitami Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2010-07-30 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2010-36 |
| Volume (vol) | vol.110 |
| Number (no) | no.154 |
| Page | pp.29-34 |
| #Pages | 6 |
| Date of Issue | 2010-07-22 (CPM) |
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