IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-11-11 13:00
[Invited Talk] Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory
Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.) SDM2010-173 Link to ES Tech. Rep. Archives: SDM2010-173
Abstract (in Japanese) (See Japanese page) 
(in English) A MLC (Multi-level cell) SPRAM (Spin transfer torque RAM) with series-stacked MTJs (Magneto tunnel junctions) was developed. We demonstrate the successful four-level operation, which means two-bits/cell, for the first time. It is shown that areas of the two-MTJs are required to be different. In addition, two-step write and read techniques for memory operation are also proposed.
Keyword (in Japanese) (See Japanese page) 
(in English) SPRAM (Spin transfer torque RAM) / STT (Spin transfer torque) / / TMR (Tunnel magneto resistance) / MTJ (Magneto tunnel junction) / MLC (Multi-level cell) / 2-step write technique / 2-step read technique  
Reference Info. IEICE Tech. Rep., vol. 110, no. 274, SDM2010-173, pp. 11-15, Nov. 2010.
Paper # SDM2010-173 
Date of Issue 2010-11-04 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-173 Link to ES Tech. Rep. Archives: SDM2010-173

Conference Information
Committee SDM  
Conference Date 2010-11-11 - 2010-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulations, etc 
Paper Information
Registration To SDM 
Conference Code 2010-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory 
Sub Title (in English)  
Keyword(1) SPRAM (Spin transfer torque RAM)  
Keyword(2) STT (Spin transfer torque)  
Keyword(3)  
Keyword(4) TMR (Tunnel magneto resistance)  
Keyword(5) MTJ (Magneto tunnel junction)  
Keyword(6) MLC (Multi-level cell)  
Keyword(7) 2-step write technique  
Keyword(8) 2-step read technique  
1st Author's Name Takashi Ishigaki  
1st Author's Affiliation Central Research Laboratory, Hitachi. Ltd. (Hitachi)
2nd Author's Name Takayuki Kawahara  
2nd Author's Affiliation Central Research Laboratory, Hitachi. Ltd. (Hitachi)
3rd Author's Name Riichiro Takemura  
3rd Author's Affiliation Central Research Laboratory, Hitachi. Ltd. (Hitachi)
4th Author's Name Kazuo Ono  
4th Author's Affiliation Central Research Laboratory, Hitachi. Ltd. (Hitachi)
5th Author's Name Kenchi Ito  
5th Author's Affiliation Advanced Research Laboratory, Hitachi. Ltd. (Hitachi)
6th Author's Name Hideo Ohno  
6th Author's Affiliation Tohoku University (Tohoku U.)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2010-11-11 13:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2010-173 
Volume (vol) vol.110 
Number (no) no.274 
Page pp.11-15 
#Pages
Date of Issue 2010-11-04 (SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan