Paper Abstract and Keywords |
Presentation |
2010-11-11 13:00
[Invited Talk]
Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.) SDM2010-173 Link to ES Tech. Rep. Archives: SDM2010-173 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A MLC (Multi-level cell) SPRAM (Spin transfer torque RAM) with series-stacked MTJs (Magneto tunnel junctions) was developed. We demonstrate the successful four-level operation, which means two-bits/cell, for the first time. It is shown that areas of the two-MTJs are required to be different. In addition, two-step write and read techniques for memory operation are also proposed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SPRAM (Spin transfer torque RAM) / STT (Spin transfer torque) / / TMR (Tunnel magneto resistance) / MTJ (Magneto tunnel junction) / MLC (Multi-level cell) / 2-step write technique / 2-step read technique |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 274, SDM2010-173, pp. 11-15, Nov. 2010. |
Paper # |
SDM2010-173 |
Date of Issue |
2010-11-04 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2010-173 Link to ES Tech. Rep. Archives: SDM2010-173 |
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