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| Presentation | 2011-01-28 10:50 A transimpedance amplifier for 10G-EPON OLT -- Swich circuit using HBT transistor for burst mode TIA -- Hiroshi Hara, Sosaku Sawada (SEI)  OCS2010-111 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report a newly developed dual rate burst mode transimpedance amplifier (TIA), which is key device for 10G-EPON OLT. The automatic gain control (AGC) of TIA is used average detection type. For receiving the burst mode, we developed the switch circuit using transistor in order to change the time constant of the average detection of AGC during preamble signal. TIA IC is fabricated with InP HBT process technology. We evaluated an assembled optical receiver with APD and TIA. As a result, 10.3G and 1.25G receiver sensitivity of -29.9dBm and -33.9dBm are achieved, respectively. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | IEEE802.3av / 10G-EPON / OLT / burst mode / dual rate / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 392, OCS2010-111, pp. 73-76, Jan. 2011. | |
| Paper # | OCS2010-111 | |
| Date of Issue | 2011-01-20 (OCS) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OCS2010-111 |
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| Conference Information | |
| Committee | OCS CS |
| Conference Date | 2011-01-27 - 2011-01-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | The University of Tokushima |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Core/metro system, Optical access system/next generation PON, Broadband access system, (Wide area)Ethernet, Optical transport network(OTN), High-speed interface, Analog optaical transmission, Quantum communication etc. |
| Paper Information | |
| Registration To | OCS |
| Conference Code | 2011-01-OCS-CS |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A transimpedance amplifier for 10G-EPON OLT |
| Sub Title (in English) | Swich circuit using HBT transistor for burst mode TIA |
| Keyword(1) | IEEE802.3av |
| Keyword(2) | 10G-EPON |
| Keyword(3) | OLT |
| Keyword(4) | burst mode |
| Keyword(5) | dual rate |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroshi Hara |
| 1st Author's Affiliation | Sumitomo Electric Industries,Ltd. (SEI) |
| 2nd Author's Name | Sosaku Sawada |
| 2nd Author's Affiliation | Sumitomo Electric Industries,Ltd. (SEI) |
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| Speaker | Author-1 |
| Date Time | 2011-01-28 10:50:00 |
| Presentation Time | 25 minutes |
| Registration for | OCS |
| Paper # | OCS2010-111 |
| Volume (vol) | vol.110 |
| Number (no) | no.392 |
| Page | pp.73-76 |
| #Pages | 4 |
| Date of Issue | 2011-01-20 (OCS) |
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