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Paper Abstract and Keywords
Presentation 2011-02-07 15:25
Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology
Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo) SDM2010-224 Link to ES Tech. Rep. Archives: SDM2010-224
Abstract (in Japanese) (See Japanese page) 
(in English) Diffusion behavior of Cu in Cu through-silicon-vias (TSVs) fabricated using low-temperature plasma enhanced chemical vapor deposition (LT-PECVD) has been evaluated. Silicon oxy-nitride (SiON) barrier films were formed by LT-PECVD at 150°C. Cu diffusion rate was found to increase with decreasing film density. The critical density and thickness for prevention of Cu diffusion into Si substrate have been estimated. In case of a film with density >60% of the bulk value and/or thickness >100 nm, no change of electrical resistance for stacked wafers containing TSVs was observed after 1000 cycles of thermal stress. According to above results, SiON film formed at 150°C can be used for the TSV process without any degradation of electrical characteristics and reliability, enabling a reduction in total process temperature in the wafer-on-wafer technology.
Keyword (in Japanese) (See Japanese page) 
(in English) 3D-IC / TSV / LT-PECVD / Diffusion barrier / BS-SIMS / XPS / Film density /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 408, SDM2010-224, pp. 49-53, Feb. 2011.
Paper # SDM2010-224 
Date of Issue 2011-01-31 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-224 Link to ES Tech. Rep. Archives: SDM2010-224

Conference Information
Committee SDM  
Conference Date 2011-02-07 - 2011-02-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2011-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology 
Sub Title (in English)  
Keyword(1) 3D-IC  
Keyword(2) TSV  
Keyword(3) LT-PECVD  
Keyword(4) Diffusion barrier  
Keyword(5) BS-SIMS  
Keyword(6) XPS  
Keyword(7) Film density  
Keyword(8)  
1st Author's Name Hideki Kitada  
1st Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
2nd Author's Name Nobuhide Maeda  
2nd Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
3rd Author's Name Koji Fujimoto  
3rd Author's Affiliation Dai Nippon Printing (Dai Nippon Printing)
4th Author's Name Yoriko Mizushima  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Laboratories Ltd.)
5th Author's Name Yoshihiro Nakata  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Laboratories Ltd.)
6th Author's Name Tomoji Nakamura  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Laboratories Ltd.)
7th Author's Name Takayuki Ohba  
7th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
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Speaker Author-1 
Date Time 2011-02-07 15:25:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2010-224 
Volume (vol) vol.110 
Number (no) no.408 
Page pp.49-53 
#Pages
Date of Issue 2011-01-31 (SDM) 


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