Paper Abstract and Keywords |
Presentation |
2011-02-24 11:10
Current Intermittency in SOI-FETs under Light Illumination Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) ED2010-204 SDM2010-239 Link to ES Tech. Rep. Archives: ED2010-204 SDM2010-239 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We investigate the effects of continuous light illumination on single-electron transport via quantum dots in silicon-on-insulator field-effect transistors (SOI-FETs). In doped-channel FETs, current flows by single-electron tunneling via an individual donor. Under light, the current exhibits intermittency, observed as random telegraph switching (RTS). The number of current steps increases proportionally with the incident photon flux. The current intermittency is ascribed to be trapping and detrapping of a photo-generated electron in a single donor in the channel based on its dependence on light intensity and temperature. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
single donor / photon / single electron transistor / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 423, ED2010-204, pp. 67-72, Feb. 2011. |
Paper # |
ED2010-204 |
Date of Issue |
2011-02-16 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2010-204 SDM2010-239 Link to ES Tech. Rep. Archives: ED2010-204 SDM2010-239 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2011-02-23 - 2011-02-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Functional nanodevices and related technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2011-02-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Current Intermittency in SOI-FETs under Light Illumination |
Sub Title (in English) |
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single donor |
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photon |
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single electron transistor |
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1st Author's Name |
Arief Udhiarto |
1st Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
2nd Author's Name |
Daniel Moraru |
2nd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
3rd Author's Name |
Ryusuke Nakamura |
3rd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
4th Author's Name |
Takeshi Mizuno |
4th Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
5th Author's Name |
Michiharu Tabe |
5th Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
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Speaker |
Author-1 |
Date Time |
2011-02-24 11:10:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2010-204, SDM2010-239 |
Volume (vol) |
vol.110 |
Number (no) |
no.423(ED), no.424(SDM) |
Page |
pp.67-72 |
#Pages |
6 |
Date of Issue |
2011-02-16 (ED, SDM) |
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