Paper Abstract and Keywords |
Presentation |
2011-04-19 15:50
Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM) Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) ICD2011-19 Link to ES Tech. Rep. Archives: ICD2011-19 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We prepared resistive random access memory (ReRAM) structures of Al / Bi2Sr2CaCu2O8+δ (Bi-2212) bulk single crystal / Pt and Pt / Bi-2212 bulk single crystal / Pt, and evaluated both memory and superconducting properties. The memory effect was confirmed only in the former and was enhanced with decreasing critical temperature by annealing the sample. Taking advantage of the large anisotropy of Bi-2212 single crystals, it was clarified that the memory effect occurred at the boundary between Al and Bi-2212. This showed that the introduction of oxygen-depleted layer to the Bi-2212 was required for the development of the memory effect. And, this could be achieved by depositing an electrode with low Gibbs free energy on the Bi-2212 and heating it to the temperature corresponding to the activation energy which generates oxygen movement from Bi-2212 to the electrode. The model which explains the resistance switching of perovskite-oxide-based-ReRAM was proposed based on the results. This provides the guideline for selecting oxide and electrode materials of perovskite-oxide-based-ReRAM. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ReRAM / perovskite oxide / Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal / switching mechanism / Gibbs free energy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 6, ICD2011-19, pp. 105-109, April 2011. |
Paper # |
ICD2011-19 |
Date of Issue |
2011-04-11 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ICD2011-19 Link to ES Tech. Rep. Archives: ICD2011-19 |