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Paper Abstract and Keywords
Presentation 2011-04-19 15:50
Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM)
Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) ICD2011-19 Link to ES Tech. Rep. Archives: ICD2011-19
Abstract (in Japanese) (See Japanese page) 
(in English) We prepared resistive random access memory (ReRAM) structures of Al / Bi2Sr2CaCu2O8+δ (Bi-2212) bulk single crystal / Pt and Pt / Bi-2212 bulk single crystal / Pt, and evaluated both memory and superconducting properties. The memory effect was confirmed only in the former and was enhanced with decreasing critical temperature by annealing the sample. Taking advantage of the large anisotropy of Bi-2212 single crystals, it was clarified that the memory effect occurred at the boundary between Al and Bi-2212. This showed that the introduction of oxygen-depleted layer to the Bi-2212 was required for the development of the memory effect. And, this could be achieved by depositing an electrode with low Gibbs free energy on the Bi-2212 and heating it to the temperature corresponding to the activation energy which generates oxygen movement from Bi-2212 to the electrode. The model which explains the resistance switching of perovskite-oxide-based-ReRAM was proposed based on the results. This provides the guideline for selecting oxide and electrode materials of perovskite-oxide-based-ReRAM.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / perovskite oxide / Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal / switching mechanism / Gibbs free energy / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 6, ICD2011-19, pp. 105-109, April 2011.
Paper # ICD2011-19 
Date of Issue 2011-04-11 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2011-19 Link to ES Tech. Rep. Archives: ICD2011-19

Conference Information
Committee ICD  
Conference Date 2011-04-18 - 2011-04-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kobe University Takigawa Memorial Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2011-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM) 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) perovskite oxide  
Keyword(3) Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal  
Keyword(4) switching mechanism  
Keyword(5) Gibbs free energy  
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1st Author's Name Akihiro Hanada  
1st Author's Affiliation Tottori University (Tottori Univ.)
2nd Author's Name Kentaro Kinoshita  
2nd Author's Affiliation Tottori University/Tottori University Electronic Display Research Center (TEDREC) (Tottori Univ./TEDREC)
3rd Author's Name Katsuhiko Matsubara  
3rd Author's Affiliation Tottori University (Tottori Univ.)
4th Author's Name Takahiro Fukuhara  
4th Author's Affiliation Tottori University (Tottori Univ.)
5th Author's Name Satoru Kishida  
5th Author's Affiliation Tottori University/Tottori University Electronic Display Research Center (TEDREC) (Tottori Univ./TEDREC)
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Speaker Author-1 
Date Time 2011-04-19 15:50:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2011-19 
Volume (vol) vol.111 
Number (no) no.6 
Page pp.105-109 
#Pages
Date of Issue 2011-04-11 (ICD) 


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