Paper Abstract and Keywords |
Presentation |
2011-05-19 17:30
High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-18 CPM2011-25 SDM2011-31 Link to ES Tech. Rep. Archives: ED2011-18 CPM2011-25 SDM2011-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
AlN/GaN multilayer structures have relatively large refractive index differences in the group-III nitride semiconductors, which are expected to obtain high reflectivity distributed Bragg reflectors (DBRs) with a relatively small number of pairs. On the other hand, due to the cracks caused by the lattice mismatch, it is difficult to fabricate DBRs having high reflectivities in a large area. In this paper, we fabricated AlN/GaN DBRs on AlN templates for the first time in order to suppress the cracks by minimizing the tensile strain in the DBR layers. A high reflectivity of 97.5% was achieved in the 30 pair AlN/GaN DBR on AlN template. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Distributed Bragg Reflector / crack / AlN / Reflectance / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 45, CPM2011-25, pp. 89-93, May 2011. |
Paper # |
CPM2011-25 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2011-18 CPM2011-25 SDM2011-31 Link to ES Tech. Rep. Archives: ED2011-18 CPM2011-25 SDM2011-31 |
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