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Paper Abstract and Keywords
Presentation 2011-05-20 09:50
Fabrication of GaN-based Tunnel Junctions
Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ) ED2011-21 CPM2011-28 SDM2011-34 Link to ES Tech. Rep. Archives: ED2011-21 CPM2011-28 SDM2011-34
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated nitride semiconductor-based tunnel junctions for a novel current injection, not restricted with the high resistivity of the p-type GaN layers. First, the reverse current-voltage characteristics of the nitride semiconductor tunnel junctions were calculated. It seems necessary to obtain less than 3nm tunnel barriers for enough current injections (more than 100A/cm2), which also requires at least 5×1020cm-3 impurities in the tunnel junctions. Subsequently, we fabricated LED structures injected the current through the tunnel junctions by MOVPE. We found that the sample surfaces got rough as Mg/Ga ratio was increased during the growth of the tunnel junctions to achieve the high impurity concentrations mentioned above. At the same time, relatively smooth surfaces were obtained by adjusting the thicknesses of the highly doped layers. A relatively uniform light emission was then obtained from the LED with the tunnel junction, showing high driving voltage, 12V at 20mA injection.
Keyword (in Japanese) (See Japanese page) 
(in English) tunnel junction / nitride semiconductors / Mg / Ga ratio / doping / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 44, ED2011-21, pp. 105-110, May 2011.
Paper # ED2011-21 
Date of Issue 2011-05-12 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2011-21 CPM2011-28 SDM2011-34 Link to ES Tech. Rep. Archives: ED2011-21 CPM2011-28 SDM2011-34

Conference Information
Committee CPM SDM ED  
Conference Date 2011-05-19 - 2011-05-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. (VBL) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-05-CPM-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of GaN-based Tunnel Junctions 
Sub Title (in English)  
Keyword(1) tunnel junction  
Keyword(2) nitride semiconductors  
Keyword(3) Mg / Ga ratio  
Keyword(4) doping  
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1st Author's Name Mitsuru Kaga  
1st Author's Affiliation Meijo University (Meijo Univ)
2nd Author's Name Daisuke Iida  
2nd Author's Affiliation Meijo University (Meijo Univ)
3rd Author's Name Tsukasa Kitano  
3rd Author's Affiliation EL-SEED Corporation (EL-SEED)
4th Author's Name Kouji Yamashita  
4th Author's Affiliation Meijo University (Meijo Univ)
5th Author's Name Kouta Yagi  
5th Author's Affiliation Meijo University (Meijo Univ)
6th Author's Name Motoaki Iwaya  
6th Author's Affiliation Meijo University (Meijo Univ)
7th Author's Name Tetsuya Takeuchi  
7th Author's Affiliation Meijo University (Meijo Univ)
8th Author's Name Satoshi Kamiyama  
8th Author's Affiliation Meijo University (Meijo Univ)
9th Author's Name Isamu Akasaki  
9th Author's Affiliation Meijo University/Nagoya University (Meijo Univ/Nagoya Univ)
10th Author's Name Hiroshi Amano  
10th Author's Affiliation Nagoya University (Nagoya Univ)
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Speaker Author-1 
Date Time 2011-05-20 09:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-21, CPM2011-28, SDM2011-34 
Volume (vol) vol.111 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.105-110 
#Pages
Date of Issue 2011-05-12 (ED, CPM, SDM) 


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