Paper Abstract and Keywords |
Presentation |
2011-05-20 09:50
Fabrication of GaN-based Tunnel Junctions Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ) ED2011-21 CPM2011-28 SDM2011-34 Link to ES Tech. Rep. Archives: ED2011-21 CPM2011-28 SDM2011-34 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated nitride semiconductor-based tunnel junctions for a novel current injection, not restricted with the high resistivity of the p-type GaN layers. First, the reverse current-voltage characteristics of the nitride semiconductor tunnel junctions were calculated. It seems necessary to obtain less than 3nm tunnel barriers for enough current injections (more than 100A/cm2), which also requires at least 5×1020cm-3 impurities in the tunnel junctions. Subsequently, we fabricated LED structures injected the current through the tunnel junctions by MOVPE. We found that the sample surfaces got rough as Mg/Ga ratio was increased during the growth of the tunnel junctions to achieve the high impurity concentrations mentioned above. At the same time, relatively smooth surfaces were obtained by adjusting the thicknesses of the highly doped layers. A relatively uniform light emission was then obtained from the LED with the tunnel junction, showing high driving voltage, 12V at 20mA injection. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
tunnel junction / nitride semiconductors / Mg / Ga ratio / doping / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 44, ED2011-21, pp. 105-110, May 2011. |
Paper # |
ED2011-21 |
Date of Issue |
2011-05-12 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2011-21 CPM2011-28 SDM2011-34 Link to ES Tech. Rep. Archives: ED2011-21 CPM2011-28 SDM2011-34 |
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