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| Presentation | 2011-05-20 17:05 Study on AlInN barrier layer of GaInN channel HFET Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Naofumi Horio, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.)  ED2011-35 CPM2011-42 SDM2011-48 Link to ES Tech. Rep. Archives: ED2011-35 CPM2011-42 SDM2011-48 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaInN channel heterostructure field-effect transistors (HFETs) are promising for applications involving high operation current because they spontaneously produce high-density sheet carriers and strongly confine two-dimensional electron gases (2DEGs) owing to their large conduction band offset, and the large polarization charges. HFET using an AlInN barrier layer is also promising for a lattice-matched large-bandgap barrier structure. In addition, the MOVPE growth conditions for GaInN channel and AlInN barriers are similar. Thus, the combination of these materials is expected to achieve high-performance HFETs. In this study, we report on the electrical properties of AlInN/GaInN based heterostructures fabricated on a GaN template. We also fabricated and characterized AlInN/GaInN HFETs. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlInN / GaInN / AlN / HFET / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 44, ED2011-35, pp. 179-183, May 2011. | |
| Paper # | ED2011-35 | |
| Date of Issue | 2011-05-12 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-35 CPM2011-42 SDM2011-48 Link to ES Tech. Rep. Archives: ED2011-35 CPM2011-42 SDM2011-48 |
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| Conference Information | |
| Committee | CPM SDM ED |
| Conference Date | 2011-05-19 - 2011-05-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. (VBL) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2011-05-CPM-SDM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on AlInN barrier layer of GaInN channel HFET |
| Sub Title (in English) | |
| Keyword(1) | AlInN |
| Keyword(2) | GaInN |
| Keyword(3) | AlN |
| Keyword(4) | HFET |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazuya Ikeda |
| 1st Author's Affiliation | Meijo University (Meijo Univ.) |
| 2nd Author's Name | Yasuhiro Isobe |
| 2nd Author's Affiliation | Meijo University (Meijo Univ.) |
| 3rd Author's Name | Hiromichi Ikki |
| 3rd Author's Affiliation | Meijo University (Meijo Univ.) |
| 4th Author's Name | Naofumi Horio |
| 4th Author's Affiliation | Meijo University (Meijo Univ.) |
| 5th Author's Name | Tatsuyuki Sakakibara |
| 5th Author's Affiliation | Meijo University (Meijo Univ.) |
| 6th Author's Name | Motoaki Iwaya |
| 6th Author's Affiliation | Meijo University (Meijo Univ.) |
| 7th Author's Name | Tetsuya Takeuchi |
| 7th Author's Affiliation | Meijo University (Meijo Univ.) |
| 8th Author's Name | Satoshi Kamiyama |
| 8th Author's Affiliation | Meijo University (Meijo Univ.) |
| 9th Author's Name | Isamu Akasaki |
| 9th Author's Affiliation | Meijo University/Nagoya University (Meijo Univ./Nagoya Univ.) |
| 10th Author's Name | Hiroshi Amano |
| 10th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-05-20 17:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2011-35, CPM2011-42, SDM2011-48 |
| Volume (vol) | vol.111 |
| Number (no) | no.44(ED), no.45(CPM), no.46(SDM) |
| Page | pp.179-183 |
| #Pages | 5 |
| Date of Issue | 2011-05-12 (ED, CPM, SDM) |
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