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| Presentation | 2011-07-04 14:20 Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.)  SDM2011-62 Link to ES Tech. Rep. Archives: SDM2011-62 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Schottky-barrier changes by the structural disorders are studied using the first-principles calculations and adopting Au/Si interface. It is shown that structural disorders prefer to locate near the interface, and the penetration depth of the MIGS into Si is about 5 Si layers, which is similar to the case of flat clean interface. Moreover, the Schottky barrier for holes does not change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Schottky barrier / metal/Si interfaces / MIGS / DIGS / first-principles calculation / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-62, pp. 69-73, July 2011. | |
| Paper # | SDM2011-62 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-62 Link to ES Tech. Rep. Archives: SDM2011-62 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study |
| Sub Title (in English) | |
| Keyword(1) | Schottky barrier |
| Keyword(2) | metal/Si interfaces |
| Keyword(3) | MIGS |
| Keyword(4) | DIGS |
| Keyword(5) | first-principles calculation |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kyosuke Kobinata |
| 1st Author's Affiliation | Chiba University (Chiba Univ.) |
| 2nd Author's Name | Takashi Nakayama |
| 2nd Author's Affiliation | Chiba University (Chiba Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-04 14:20:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-62 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.69-73 |
| #Pages | 5 |
| Date of Issue | 2011-06-27 (SDM) |
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