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| Presentation | 2011-07-04 15:40 Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure Yuki Odake, Hiroaki Arimura, Masayuki Saeki, Keisuke Chikaraishi, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)  SDM2011-65 Link to ES Tech. Rep. Archives: SDM2011-65 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We investigated Hf and La upward diffusion in TiN/HfLaSiO/SiO2 gate stacks by means of electrical characterization and XPS analysis. TiN/HfLaSiO/SiO2 gate stacks annealed at temperatures above 900℃ show an increase in EOT due to the SiO2 growth and Hf and La diffusion into the TiN electrode. In contrast, poly-Si/TiN/HfLaSiO/SiO2 gate stacks maintain thin EOT of around 1 nm and suppress the Hf and La upward diffusion. To clarify the origin of the Hf and La upward diffusion, we also fabricated poly-Si/TiON/HfSiO/SiO2 gate stacks and revealed that SiO2 growth during high-temperature annealing induces Hf and La upward diffusion. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | High-k Gate Dielectrics / Metal Electrodes / Thermal Diffusion / XPS / HfSiO / HfLaSiO / TiN / MIPS | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 114, SDM2011-65, pp. 87-92, July 2011. | |
| Paper # | SDM2011-65 | |
| Date of Issue | 2011-06-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-65 Link to ES Tech. Rep. Archives: SDM2011-65 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2011-07-04 - 2011-07-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for Electron Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2011-07-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure |
| Sub Title (in English) | |
| Keyword(1) | High-k Gate Dielectrics |
| Keyword(2) | Metal Electrodes |
| Keyword(3) | Thermal Diffusion |
| Keyword(4) | XPS |
| Keyword(5) | HfSiO |
| Keyword(6) | HfLaSiO |
| Keyword(7) | TiN |
| Keyword(8) | MIPS |
| 1st Author's Name | Yuki Odake |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Hiroaki Arimura |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Masayuki Saeki |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Keisuke Chikaraishi |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Naomu Kitano |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
| 6th Author's Name | Takuji Hosoi |
| 6th Author's Affiliation | Osaka University (Osaka Univ.) |
| 7th Author's Name | Takayoshi Shimura |
| 7th Author's Affiliation | Osaka University (Osaka Univ.) |
| 8th Author's Name | Heiji Watanabe |
| 8th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2011-07-04 15:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2011-65 |
| Volume (vol) | vol.111 |
| Number (no) | no.114 |
| Page | pp.87-92 |
| #Pages | 6 |
| Date of Issue | 2011-06-27 (SDM) |
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