Paper Abstract and Keywords |
Presentation |
2011-10-21 09:00
[Invited Talk]
Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy Hiroshi Nohira, Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentaro Sawano (Tokyo City Univ.), M. Myronov (Univ. of Warwick), Yasuhiro Shiraki (Tokyo City Univ.) SDM2011-103 Link to ES Tech. Rep. Archives: SDM2011-103 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the influence of Si-cap layer and the post deposition annealing (PDA) on compositional depth profiles and chemical structures of HfO2/Si-cap/strained Ge/Si0.5Ge0.5/Si interfaces by angle-resolved X-ray photoelectron spectroscopy. Analyses of Ge 2p, Si 1s, Hf 3d and O 1s spectra show that strained-Ge layer was oxidized during the deposition of HfO2 in the case of 1 nm in thickness of the Si-cap layer and that strained-Ge layer was not oxidized in the case of 3 nm and 5 nm in thickness of the Si-cap layer. A critical Si thickness also extracted. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
synchrotron radiation / Angle Resolved X-Ray Photoelectron Spectroscopy / Si-cap / HfO2 / strained Ge / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 249, SDM2011-103, pp. 37-41, Oct. 2011. |
Paper # |
SDM2011-103 |
Date of Issue |
2011-10-13 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2011-103 Link to ES Tech. Rep. Archives: SDM2011-103 |