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Paper Abstract and Keywords
Presentation 2011-10-21 09:00
[Invited Talk] Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy
Hiroshi Nohira, Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentaro Sawano (Tokyo City Univ.), M. Myronov (Univ. of Warwick), Yasuhiro Shiraki (Tokyo City Univ.) SDM2011-103 Link to ES Tech. Rep. Archives: SDM2011-103
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the influence of Si-cap layer and the post deposition annealing (PDA) on compositional depth profiles and chemical structures of HfO2/Si-cap/strained Ge/Si0.5Ge0.5/Si interfaces by angle-resolved X-ray photoelectron spectroscopy. Analyses of Ge 2p, Si 1s, Hf 3d and O 1s spectra show that strained-Ge layer was oxidized during the deposition of HfO2 in the case of 1 nm in thickness of the Si-cap layer and that strained-Ge layer was not oxidized in the case of 3 nm and 5 nm in thickness of the Si-cap layer. A critical Si thickness also extracted.
Keyword (in Japanese) (See Japanese page) 
(in English) synchrotron radiation / Angle Resolved X-Ray Photoelectron Spectroscopy / Si-cap / HfO2 / strained Ge / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-103, pp. 37-41, Oct. 2011.
Paper # SDM2011-103 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-103 Link to ES Tech. Rep. Archives: SDM2011-103

Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy 
Sub Title (in English)  
Keyword(1) synchrotron radiation  
Keyword(2) Angle Resolved X-Ray Photoelectron Spectroscopy  
Keyword(3) Si-cap  
Keyword(4) HfO2  
Keyword(5) strained Ge  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Nohira  
1st Author's Affiliation Tokyo City University (Tokyo City Univ.)
2nd Author's Name Arata Komatsu  
2nd Author's Affiliation Tokyo City University (Tokyo City Univ.)
3rd Author's Name Kentarou Nasu  
3rd Author's Affiliation Tokyo City University (Tokyo City Univ.)
4th Author's Name Yusuke Hoshi  
4th Author's Affiliation Tokyo City University (Tokyo City Univ.)
5th Author's Name Toru Kurebayashi  
5th Author's Affiliation Tokyo City University (Tokyo City Univ.)
6th Author's Name Kentaro Sawano  
6th Author's Affiliation Tokyo City University (Tokyo City Univ.)
7th Author's Name M. Myronov  
7th Author's Affiliation The University of Warwick (Univ. of Warwick)
8th Author's Name Yasuhiro Shiraki  
8th Author's Affiliation Tokyo City University (Tokyo City Univ.)
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Speaker Author-1 
Date Time 2011-10-21 09:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2011-103 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.37-41 
#Pages
Date of Issue 2011-10-13 (SDM) 


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