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Paper Abstract and Keywords
Presentation 2011-10-21 15:25
High Purity Metal Organic Gas Distribution System
Satoru Yamashita, Hidekazu Ishii, Yoshinobu Shiba, Masafumi Kitano, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-112 Link to ES Tech. Rep. Archives: SDM2011-112
Abstract (in Japanese) (See Japanese page) 
(in English) The gas flow control is important factor that influenced to the concentration of process gas and the pressure of process chamber. In composite semiconductor manufacturing process that using metal organic (MO) gases, the flow control system that controls the flow rate of MO gas must be established to improve the film performance and reliability of film formation process. So, flow control system based on pressure measurement (FCS) for high temperature was developed and it is possible to control the flow rate of MO gases. Also, the concentration of MO gas was controlled with great accuracy. Furthermore, liquid source control system (LSCS) was developed for the purpose of reduction of MO gas distribution system area and thermal history. And the system that MO material only the quantity needed was vaporized and control the flow rate of MO gas was developed.
Keyword (in Japanese) (See Japanese page) 
(in English) metal organic gas / MOCVD / flow control system / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-112, pp. 85-90, Oct. 2011.
Paper # SDM2011-112 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-112 Link to ES Tech. Rep. Archives: SDM2011-112

Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Purity Metal Organic Gas Distribution System 
Sub Title (in English)  
Keyword(1) metal organic gas  
Keyword(2) MOCVD  
Keyword(3) flow control system  
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1st Author's Name Satoru Yamashita  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Hidekazu Ishii  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Yoshinobu Shiba  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Masafumi Kitano  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Yasuyuki Shirai  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Shigetoshi Sugawa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Tadahiro Ohmi  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2011-10-21 15:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2011-112 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.85-90 
#Pages
Date of Issue 2011-10-13 (SDM) 


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