Paper Abstract and Keywords |
Presentation |
2011-11-17 13:20
Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 Link to ES Tech. Rep. Archives: ED2011-78 CPM2011-127 LQE2011-101 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structures. For the dry etching, we used ECR-assisted plasma with CH4/H2/N2/Ar gas mixture and ICP-assisted plasma with Cl2/BCl3 gas mixture. Both processes induced the disorder of chemical bonds at the GaN surface, causing high-density of electronic states at Al2O3/GaN interfaces. A post-annealing process at 400 C is effective in decreasing interface state densities, e.g., 5x1011 cm-2eV-1 for the ICP-processed MOS sample. On the other hand, the interface state densities with 1x1012 cm-2eV-1 or higher remained at the ICP-processed Al2O3/AlGaN interface even after the post-annealing process. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
dry etching / ICP / ECR / MOS / GaN / AlGaN / Al2O3 / interface state |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 290, ED2011-78, pp. 25-28, Nov. 2011. |
Paper # |
ED2011-78 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2011-78 CPM2011-127 LQE2011-101 Link to ES Tech. Rep. Archives: ED2011-78 CPM2011-127 LQE2011-101 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2011-11-17 - 2011-11-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Katsura Hall,Kyoto Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2011-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN |
Sub Title (in English) |
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Keyword(1) |
dry etching |
Keyword(2) |
ICP |
Keyword(3) |
ECR |
Keyword(4) |
MOS |
Keyword(5) |
GaN |
Keyword(6) |
AlGaN |
Keyword(7) |
Al2O3 |
Keyword(8) |
interface state |
1st Author's Name |
Sungsik Kim |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Yujin Hori |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Zenji Yatabe |
3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
4th Author's Name |
Tamotsu Hashizume |
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Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2011-11-17 13:20:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2011-78, CPM2011-127, LQE2011-101 |
Volume (vol) |
vol.111 |
Number (no) |
no.290(ED), no.291(CPM), no.292(LQE) |
Page |
pp.25-28 |
#Pages |
4 |
Date of Issue |
2011-11-10 (ED, CPM, LQE) |
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