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Paper Abstract and Keywords
Presentation 2011-11-17 13:20
Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN
Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 Link to ES Tech. Rep. Archives: ED2011-78 CPM2011-127 LQE2011-101
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structures. For the dry etching, we used ECR-assisted plasma with CH4/H2/N2/Ar gas mixture and ICP-assisted plasma with Cl2/BCl3 gas mixture. Both processes induced the disorder of chemical bonds at the GaN surface, causing high-density of electronic states at Al2O3/GaN interfaces. A post-annealing process at 400 C is effective in decreasing interface state densities, e.g., 5x1011 cm-2eV-1 for the ICP-processed MOS sample. On the other hand, the interface state densities with 1x1012 cm-2eV-1 or higher remained at the ICP-processed Al2O3/AlGaN interface even after the post-annealing process.
Keyword (in Japanese) (See Japanese page) 
(in English) dry etching / ICP / ECR / MOS / GaN / AlGaN / Al2O3 / interface state  
Reference Info. IEICE Tech. Rep., vol. 111, no. 290, ED2011-78, pp. 25-28, Nov. 2011.
Paper # ED2011-78 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2011-78 CPM2011-127 LQE2011-101 Link to ES Tech. Rep. Archives: ED2011-78 CPM2011-127 LQE2011-101

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall,Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN 
Sub Title (in English)  
Keyword(1) dry etching  
Keyword(2) ICP  
Keyword(3) ECR  
Keyword(4) MOS  
Keyword(5) GaN  
Keyword(6) AlGaN  
Keyword(7) Al2O3  
Keyword(8) interface state  
1st Author's Name Sungsik Kim  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Yujin Hori  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Zenji Yatabe  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Tamotsu Hashizume  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2011-11-17 13:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-78, CPM2011-127, LQE2011-101 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.25-28 
#Pages
Date of Issue 2011-11-10 (ED, CPM, LQE) 


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