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Presentation 2011-12-15 10:05
Ultrahigh Sensitive Plasmonic Terahertz Detector Based on Asymmetric Dual-Grating Gate InAlAs/InGaAs/InP HEMT
Yudai Tanimoto, Stephane Boubanga-Tombet, Takayuki Watanabe (Tohoku Univ.), Yuye Wang, Hiroaki Minamide, Hiromasa Ito (RIKEN), Denis Fateev, Vyacheslav Popov (RAS), Dominique Coquillat, Wojciech Knap (Univ. Montpellie 2), Taiichi Otsuji (Tohoku Univ.) ED2011-110 Link to ES Tech. Rep. Archives: ED2011-110
Abstract (in Japanese) (See Japanese page) 
(in English) We report on design fabrication and characterization of ultrahigh sensitive terahertz detectors based on asymmetric double-grating-gate InAlAs/InGaAs/InP high electron mobility transistors. We show that an excellent coupling efficiency and nonlinear rectification response to the terahertz radiation provided by the inter-digited metal gates combined with plasmon cavities obtained by asymmetrically positioning the gate fingers in the dual-gated structure allows the achievement of a record sensitivity of 2.2 kV/W and noise equivalent power of 15 pW/Hz0.5 at 1 THz. We also demonstrate strong improvement on responsivity to 5.8 kV/W even at 1.5 THz when a dc drain-source bias is applied.
Keyword (in Japanese) (See Japanese page) 
(in English) Plasmon / Terahertz / Detection / 2DEG / HEMT / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 338, ED2011-110, pp. 57-61, Dec. 2011.
Paper # ED2011-110 
Date of Issue 2011-12-07 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-110 Link to ES Tech. Rep. Archives: ED2011-110

Conference Information
Committee ED  
Conference Date 2011-12-14 - 2011-12-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Milimeter wave, terahertz device and systems 
Paper Information
Registration To ED 
Conference Code 2011-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultrahigh Sensitive Plasmonic Terahertz Detector Based on Asymmetric Dual-Grating Gate InAlAs/InGaAs/InP HEMT 
Sub Title (in English)  
Keyword(1) Plasmon  
Keyword(2) Terahertz  
Keyword(3) Detection  
Keyword(4) 2DEG  
Keyword(5) HEMT  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yudai Tanimoto  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Stephane Boubanga-Tombet  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Takayuki Watanabe  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yuye Wang  
4th Author's Affiliation The Institute of Physical and Chemical Research (RIKEN)
5th Author's Name Hiroaki Minamide  
5th Author's Affiliation The Institute of Physical and Chemical Research (RIKEN)
6th Author's Name Hiromasa Ito  
6th Author's Affiliation The Institute of Physical and Chemical Research (RIKEN)
7th Author's Name Denis Fateev  
7th Author's Affiliation Russian academy of sciences (RAS)
8th Author's Name Vyacheslav Popov  
8th Author's Affiliation Russian academy of sciences (RAS)
9th Author's Name Dominique Coquillat  
9th Author's Affiliation Universite Montpellier 2 - CNRS (Univ. Montpellie 2)
10th Author's Name Wojciech Knap  
10th Author's Affiliation Universite Montpellier 2 - CNRS (Univ. Montpellie 2)
11th Author's Name Taiichi Otsuji  
11th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2011-12-15 10:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-110 
Volume (vol) vol.111 
Number (no) no.338 
Page pp.57-61 
#Pages
Date of Issue 2011-12-07 (ED) 


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