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| Presentation | 2012-01-12 16:25 High Power X-band 200W AlGaN/GaN HEMT Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI)  ED2011-141 MW2011-164 Link to ES Tech. Rep. Archives: ED2011-141 MW2011-164 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists of four dies of 0.4 um-gate GaN HEMT of 16 mm gate periphery together with input and output 2-stage impedance transformers assembled into a low thermal resistance package. The developed GaN HEMT provides 204W output power and 12dB small signal gain at 9.3 GHz with power added efficiency of 32% under pulse condition at a duty of 10% with a pulse width of 100usec. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / X-band / High Power / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 374, MW2011-164, pp. 121-123, Jan. 2012. | |
| Paper # | MW2011-164 | |
| Date of Issue | 2012-01-04 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-141 MW2011-164 Link to ES Tech. Rep. Archives: ED2011-141 MW2011-164 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2012-01-11 - 2012-01-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2012-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Power X-band 200W AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | X-band |
| Keyword(3) | High Power |
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| 1st Author's Name | Makoto Nishihara |
| 1st Author's Affiliation | Sumitomo Electric Device Innovations, Inc (SEDI) |
| 2nd Author's Name | Takashi Yamamoto |
| 2nd Author's Affiliation | Sumitomo Electric Device Innovations, Inc (SEDI) |
| 3rd Author's Name | Shinya Mizuno |
| 3rd Author's Affiliation | Sumitomo Electric Industries, LTD (SEI) |
| 4th Author's Name | Seigo Sano |
| 4th Author's Affiliation | Sumitomo Electric Industries, LTD (SEI) |
| 5th Author's Name | Yuichi Hasegawa |
| 5th Author's Affiliation | Sumitomo Electric Device Innovations, Inc (SEDI) |
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| Speaker | Author-1 |
| Date Time | 2012-01-12 16:25:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2011-141, MW2011-164 |
| Volume (vol) | vol.111 |
| Number (no) | no.373(ED), no.374(MW) |
| Page | pp.121-123 |
| #Pages | 3 |
| Date of Issue | 2012-01-04 (ED, MW) |
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