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Paper Abstract and Keywords
Presentation 2012-03-05 13:30
Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect
Hideharu Shimizu (Taiyo Nippon Sanso/Tokyo Univ.), Kohei Shima, Takeshi Momose (Tokyo Univ.), Yoshihiko Kobayashi (Taiyo Nippon Sanso), Yukihiro Shimogaki (Tokyo Univ.) SDM2011-180 Link to ES Tech. Rep. Archives: SDM2011-180
Abstract (in Japanese) (See Japanese page) 
(in English) The effective resistivity of interconnects are predicted to be increased by ULSI shrinking. Barrier/liner layer formed on the sides of Cu lines and via is required to be thinner and to have lower resistivity than conventional one. In our research, cobalt film with tungsten addition [Co(W) film] has been focused on from the view point of good adhesion with Cu. We have succeeded in forming Co(W) films by chemical vapor deposition (CVD) and atomic layer deposition (ALD). Co(W) films were confirmed to have barrier property against Cu diffusion and low resistivity of 60-90 micro-ohm-cm, which indicates that Co(W) can be a promising material for next-generation Cu interconnects as a single-layered barrier/liner.
Keyword (in Japanese) (See Japanese page) 
(in English) Thinner barrier / liner / cladding / scaling / CVD/ALD / Cu diffusion / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 463, SDM2011-180, pp. 25-29, March 2012.
Paper # SDM2011-180 
Date of Issue 2012-02-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF SDM2011-180 Link to ES Tech. Rep. Archives: SDM2011-180

Conference Information
Committee SDM  
Conference Date 2012-03-05 - 2012-03-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Wiring and Assembly Technology, etc 
Paper Information
Registration To SDM 
Conference Code 2012-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect 
Sub Title (in English)  
Keyword(1) Thinner barrier  
Keyword(2) liner  
Keyword(3) cladding  
Keyword(4) scaling  
Keyword(5) CVD/ALD  
Keyword(6) Cu diffusion  
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Keyword(8)  
1st Author's Name Hideharu Shimizu  
1st Author's Affiliation Taiyo Nippon Sanso/The Univ. of Tokyo (Taiyo Nippon Sanso/Tokyo Univ.)
2nd Author's Name Kohei Shima  
2nd Author's Affiliation Univ. of Tokyo (Tokyo Univ.)
3rd Author's Name Takeshi Momose  
3rd Author's Affiliation Univ. of Tokyo (Tokyo Univ.)
4th Author's Name Yoshihiko Kobayashi  
4th Author's Affiliation Taiyo Nippon Sanso (Taiyo Nippon Sanso)
5th Author's Name Yukihiro Shimogaki  
5th Author's Affiliation Univ. of Tokyo (Tokyo Univ.)
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Speaker Author-1 
Date Time 2012-03-05 13:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2011-180 
Volume (vol) vol.111 
Number (no) no.463 
Page pp.25-29 
#Pages
Date of Issue 2012-02-27 (SDM) 


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