Paper Abstract and Keywords |
Presentation |
2012-03-05 13:30
Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect Hideharu Shimizu (Taiyo Nippon Sanso/Tokyo Univ.), Kohei Shima, Takeshi Momose (Tokyo Univ.), Yoshihiko Kobayashi (Taiyo Nippon Sanso), Yukihiro Shimogaki (Tokyo Univ.) SDM2011-180 Link to ES Tech. Rep. Archives: SDM2011-180 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The effective resistivity of interconnects are predicted to be increased by ULSI shrinking. Barrier/liner layer formed on the sides of Cu lines and via is required to be thinner and to have lower resistivity than conventional one. In our research, cobalt film with tungsten addition [Co(W) film] has been focused on from the view point of good adhesion with Cu. We have succeeded in forming Co(W) films by chemical vapor deposition (CVD) and atomic layer deposition (ALD). Co(W) films were confirmed to have barrier property against Cu diffusion and low resistivity of 60-90 micro-ohm-cm, which indicates that Co(W) can be a promising material for next-generation Cu interconnects as a single-layered barrier/liner. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Thinner barrier / liner / cladding / scaling / CVD/ALD / Cu diffusion / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 463, SDM2011-180, pp. 25-29, March 2012. |
Paper # |
SDM2011-180 |
Date of Issue |
2012-02-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2011-180 Link to ES Tech. Rep. Archives: SDM2011-180 |
Conference Information |
Committee |
SDM |
Conference Date |
2012-03-05 - 2012-03-05 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Wiring and Assembly Technology, etc |
Paper Information |
Registration To |
SDM |
Conference Code |
2012-03-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect |
Sub Title (in English) |
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Keyword(1) |
Thinner barrier |
Keyword(2) |
liner |
Keyword(3) |
cladding |
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scaling |
Keyword(5) |
CVD/ALD |
Keyword(6) |
Cu diffusion |
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1st Author's Name |
Hideharu Shimizu |
1st Author's Affiliation |
Taiyo Nippon Sanso/The Univ. of Tokyo (Taiyo Nippon Sanso/Tokyo Univ.) |
2nd Author's Name |
Kohei Shima |
2nd Author's Affiliation |
Univ. of Tokyo (Tokyo Univ.) |
3rd Author's Name |
Takeshi Momose |
3rd Author's Affiliation |
Univ. of Tokyo (Tokyo Univ.) |
4th Author's Name |
Yoshihiko Kobayashi |
4th Author's Affiliation |
Taiyo Nippon Sanso (Taiyo Nippon Sanso) |
5th Author's Name |
Yukihiro Shimogaki |
5th Author's Affiliation |
Univ. of Tokyo (Tokyo Univ.) |
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Speaker |
Author-1 |
Date Time |
2012-03-05 13:30:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2011-180 |
Volume (vol) |
vol.111 |
Number (no) |
no.463 |
Page |
pp.25-29 |
#Pages |
5 |
Date of Issue |
2012-02-27 (SDM) |