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Paper Abstract and Keywords
Presentation 2012-03-05 15:55
Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures
Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.) SDM2011-184 Link to ES Tech. Rep. Archives: SDM2011-184
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the local strain structure in a thinned Si layer stacked on Si substrate for wafer-on-a-wafer applications by using micro Raman spectroscopy and x-ray microdiffraction. The fluctuation of strains in the thin Si layer around through-silicon via (TSV) interconnects is observed with a sub-micrometer scale. We separately estimated the in-plane and out-of-plane strains in the thin Si layer with x-ray diffraction two-dimensional reciprocal space mapping. We found that the anisotropic strain structure is induced in the thin Si layer around TSV interconnects.
Keyword (in Japanese) (See Japanese page) 
(in English) Thorough Si via interconnect / Strain / Microdiffraction / Wafer bonding / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 463, SDM2011-184, pp. 47-52, March 2012.
Paper # SDM2011-184 
Date of Issue 2012-02-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-184 Link to ES Tech. Rep. Archives: SDM2011-184

Conference Information
Committee SDM  
Conference Date 2012-03-05 - 2012-03-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Wiring and Assembly Technology, etc 
Paper Information
Registration To SDM 
Conference Code 2012-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures 
Sub Title (in English)  
Keyword(1) Thorough Si via interconnect  
Keyword(2) Strain  
Keyword(3) Microdiffraction  
Keyword(4) Wafer bonding  
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1st Author's Name Osamu Nakatsuka  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Hideki Kitada  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Young Suk Kim  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Yoriko Mizushima  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
5th Author's Name Tomoji Nakamura  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
6th Author's Name Takayuki Ohba  
6th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
7th Author's Name Shigeaki Zaima  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2012-03-05 15:55:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2011-184 
Volume (vol) vol.111 
Number (no) no.463 
Page pp.47-52 
#Pages
Date of Issue 2012-02-27 (SDM) 


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