Paper Abstract and Keywords |
Presentation |
2012-03-05 15:55
Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.) SDM2011-184 Link to ES Tech. Rep. Archives: SDM2011-184 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the local strain structure in a thinned Si layer stacked on Si substrate for wafer-on-a-wafer applications by using micro Raman spectroscopy and x-ray microdiffraction. The fluctuation of strains in the thin Si layer around through-silicon via (TSV) interconnects is observed with a sub-micrometer scale. We separately estimated the in-plane and out-of-plane strains in the thin Si layer with x-ray diffraction two-dimensional reciprocal space mapping. We found that the anisotropic strain structure is induced in the thin Si layer around TSV interconnects. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Thorough Si via interconnect / Strain / Microdiffraction / Wafer bonding / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 463, SDM2011-184, pp. 47-52, March 2012. |
Paper # |
SDM2011-184 |
Date of Issue |
2012-02-27 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2011-184 Link to ES Tech. Rep. Archives: SDM2011-184 |