Paper Abstract and Keywords |
Presentation |
2012-04-24 10:50
A Non-Volatile Content Addressable Memory Using Three-Terminal Magnetic Domain Wall Motion Cells Ryusuke Nebashi, Noboru Sakimura, Yukihide Tsuji (NEC), Shunsuke Fukami (Tohoku Univ.), Hiroaki Honjo, Shinsaku Saito, Sadahiko Miura, Nobuyuki Ishiwata (NEC), Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2012-10 Link to ES Tech. Rep. Archives: ICD2012-10 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A 5-ns search operation of a non-volatile content addressable memory was demonstrated. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Spintronics / Domain Wall / Content Addressable Memory / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 15, ICD2012-10, pp. 49-54, April 2012. |
Paper # |
ICD2012-10 |
Date of Issue |
2012-04-16 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ICD2012-10 Link to ES Tech. Rep. Archives: ICD2012-10 |
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